The Energy Levels of a Semiconductor Quantum Ring with an Impurity in a Magnetic Field

WANG Dong-chu; HUI Ping; XIE Hong-jing

doi:null

您当前的位置：

首页 >

文章列表页 >

The Energy Levels of a Semiconductor Quantum Ring with an Impurity in a Magnetic Field

paper | 更新时间：2020-08-12

- The Energy Levels of a Semiconductor Quantum Ring with an Impurity in a Magnetic Field
- Chinese Journal of Luminescence Vol. 30, Issue 3, Pages: 293-296(2009)
- 作者机构：
  
  1. 广州大学物理与电子工程学院,广东广州,510006
  2. 广东教育学院物理系,广东广州,510303
- 作者简介：
- 基金信息：
- DOI：
  CLC： O471.5
- Received：10 November 2008，
  
  Revised：1900-1-2，
  
  Published Online：30 June 2009，
  
  Published：30 June 2009
- 稿件说明：
移动端阅览
WANG Dong-chu, HUI Ping, XIE Hong-jing. The Energy Levels of a Semiconductor Quantum Ring with an Impurity in a Magnetic Field[J]. Chinese Journal of Luminescence, 2009, 30(3): 293-296.
DOI：

WANG Dong-chu, HUI Ping, XIE Hong-jing. The Energy Levels of a Semiconductor Quantum Ring with an Impurity in a Magnetic Field[J]. Chinese Journal of Luminescence, 2009, 30(3): 293-296. DOI：

摘要

由于量子环特殊的结构

我们尝试过不少方法

发现一般传统方法很难求解薛定谔方程

故很难求出它的波函数和能级。国内外很多学者从事这方面的研究

但发表的文献非常少。有必要寻找一些新的方法从事这方面的研究工作

本文中采用了B样条函数近似拟合波函数的方法

计算了一个在谐振子束缚势和磁场作用下含有杂质的二维量子环中的电子能级。研究了电子能级随磁场强度、束缚势的变化关系以及电子能级与量子环半径的关系。我们发现电子能级随磁场强度、束缚势强度的增强而增强;每一个能级都有一个最小值在特定的量子环半径上

并且随着能级的增加

最小值的位置向半径大的方向偏移。

Abstract

Because the complex structure of Quantum Ring

it is difficult to solve the Schrdinger equation

so it is uncertain to comfirm the energy levels and wave function. Many scholars have worked on this problem

but they have few papers on this problem. It is necessary to seek another method to solve this problem. The energy levels of a two dimensional quantum ring with an impurity in parabolic confinement under magnetic field is calculated by the B-spline functions. The dependency of the energy levels on the strength of magnetic field and ring radius is studied. We found that there is a minimum for each of the energy levels at certain ring radius. And the position of the minimum shifts to the direction of larger radius as the excited energy levels increasing.

关键词

Keywords

references

. Ramírez-Bon R, Espinoza-Beltrán F J, Arizpe-Chávez H. CdTe nanostructures prepared by thermal annealing [J]. J. Appl. Phys., 1995, 77 (10):5461-5463.

. Liu Y M, Bao C G, Shi T Y. Few-electron quantum rings in a magnetic field: Ground-state properties [J]. Phys. Rev. B, 2006, 73 (11):113313-1-4.

. Aichinger M, Chin S A, Krotscheck E, et al. Effects of geometry and impurities on quantum rings in magnetic fields [J]. Phys. Rev. B, 2006, 73 (19):195310-1-8.

. Keyser U F, Fuhner C, Borck S, et al. Kondo effect in few-electron quantum ring [J]. Phys. Rev. Lett., 2003, 90 (19):196601-1-4.

. Malet F, Barranco M, Lipparini E. Vertically coupled double quantum rings at zero magnetic field [J]. Phys. Rev. B, 2006, 73 (24):245324-1-7.

. Filikhin I, Suslov V M, Vlahovic B. Modeling of InAs/GaAs quantum ring capacitancespectroscopy in the nonparabolic approximation [J]. Phys. Rev. B, 2006, 73 (20):205332-1-4.

. Qiao H X, Shi T Y, Li B W. Calculations of electron structure of endohedrally confined helium atom with B-spline type functions [J]. Communications in Theoretical Physics, 2002, 37 (2):221-224.

. Hui P, Shi T Y, Bao C G. Investigation of the dynamical parameters of the exciton confined in CdS spherical quantum dots with the B-spline technique [J]. Communications in Theoretical Phys., 2003, 39 (3):341-344.

. Meng Xianquan, Liu Wei, Wang Dong, et al. Calculating electronic structure in quantum dot with B-spline function [J]. J. Wuhan Univ.(Nat. Sci. Ed.)( 武汉大学学报,理学版), 2007, 53 (3):328-332 (in Chinese).

Views

206

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Probability Density Distribution of Electron in Quantum Bit of Quantum Ring

Related Author

REN Bao-you

GAO Kuan-yun

ZHAO Cui-lan

Related Institution

College of Physics and Electronic Information, Inner Mongolia National University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰