The Luminescent Properties of Eu Doped SiO&lt;sub&gt;2&lt;/sub&gt; Nano-matrix

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The Luminescent Properties of Eu Doped SiO2 Nano-matrix

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- The Luminescent Properties of Eu Doped SiO2 Nano-matrix
- Chinese Journal of Luminescence Vol. 30, Issue 2, Pages: 247-251(2009)
- 作者机构：
 
 1. 西北大学光子学与光子技术研究所
 2. 西北大学化工学院
 3. 西北大学物理学系, 陕西西安 710069
- 作者简介：
 
 [ "" ]
- 基金信息：
- DOI：
 CLC： O482.31
- Received：09 July 2008，
 
 Revised：02 January 1900，
 
 Published Online：30 April 2009，
 
 Published：30 April 2009
- 稿件说明：
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The Luminescent Properties of Eu Doped SiO2 Nano-matrix[J]. Chinese journal of luminescence, 2009, 30(2): 247-251.
DOI：

The Luminescent Properties of Eu Doped SiO2 Nano-matrix[J]. Chinese journal of luminescence, 2009, 30(2): 247-251. DOI：

摘要

采用溶胶-凝胶(sol-gel)法制备了Eu掺杂的SiO

干凝胶

分别用光致发光(PL)光谱、透射电镜(TEM)、扫描电镜(SEM)、红外吸收(IR)谱等分析手段对样品进行了表征

研究了SiO

的基质中Eu

、Eu

的发光特性以及退火温度对发射光谱的影响

并对其发光机理进行了分析。结果表明

样品掺杂均匀

颗粒尺寸大约在50~80 nm

硼(B)离子进入SiO

网格

成为了基质的一部分

改变了基质的网络结构。当采用258 nm激发样品时

随着退火温度的升高

红光发射强度先增强后减弱。对于经800 ℃退火处理的样品红光发射最强

出现了576 nm(

→

)

620 nm(

→

)

658 nm(

→

)3条谱线

其中主峰位于 620 nm红光发射

对应于Eu

离子的

→

超灵敏跃迁

进一步说明B离子参与到基质中

形成了Si—O—B键

导致Eu

离子所处配位环境的对称性降低

从而有利于Eu

离子的特征发射;当采用271 nm激发样品时

随着退火温度的升高

蓝光发射强度先增强后减弱

经850 ℃退火的样品400~500 nm蓝光发射最强

归属于Eu

的5d→4f的跃迁发射

证明在铝离子(Al

)存在的情形下

在高温退火过程中Al

部分取代Si

形成AlO

基团

掺杂Eu

填补AlO

基团附近的空位

增加了Eu

周围的AlO

四面体中氧原子的电子给予能力

使得Eu

还原成Eu

从而得到了较强的蓝光发射。但是

当退火温度达到900 ℃时

由于稀土离子发生位置的迁移形成团簇红光和蓝光都明显地降低。

Abstract

paper

关键词

Keywords

references

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The Luminescent Properties of Eu Doped SiO<sub>2</sub> Nano-matrix

DOI：

摘要

Abstract

关键词

Keywords

references