InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE

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InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE

paper | 更新时间：2020-08-12

- InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE
- Chinese Journal of Luminescence Vol. 30, Issue 2, Pages: 214-218(2009)
- 作者机构：
  
  1. 首都师范大学物理系, 北京 100048
  2. 中国科学院物理研究所北京凝聚态物理国家实验室, 北京 100190
  3. 吉林大学物理学院, 吉林长春 130031
- 作者简介：
  
  [ "" ]
- 基金信息：
- DOI：
  CLC： O484.1;O484.4+1
- Received：25 August 2008，
  
  Revised：02 January 1900，
  
  Published Online：30 April 2009，
  
  Published：30 April 2009
- 稿件说明：
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InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE[J]. Chinese journal of luminescence, 2009, 30(2): 214-218.
DOI：

InAs Quantum Dots with InGaAs Caplayer Infrared Detector Grown by MBE[J]. Chinese journal of luminescence, 2009, 30(2): 214-218. DOI：

摘要

用固源分子束外延技术(SSMBE)在GaAs(111)衬底上

采用不同的界面中断时间生长了多组AlGaAs/GaAs多量子阱样品(MQWs)

通过室温发光光谱和时间分辨克尔旋转谱(TRKR)研究了界面生长中断对发光光谱半峰全宽(FWHM)和量子阱中电子自旋弛豫时间(自旋寿命)的影响

发现了自旋寿命随着界面生长中断时间的增加呈现先减小后增加的趋势

此变化趋势与荧光光谱半峰全宽表征的材料质量随中断时间的变化一致

适当的界面生长中断时间能有效的增加GaAs (111)衬底上AlGaAs/GaAs 多量子阱中电子自旋寿命。

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