Formation Mechanism and Properties of In,P Codoped p-type ZnO Thin Film

CHEN Zu-hong; YAO Bin; ZHENG Chang-ji; YANG Tong; ZHAO Ting-ting; SHAN Chong-xin; ZHANG Zh

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Formation Mechanism and Properties of In,P Codoped p-type ZnO Thin Film

paper | 更新时间：2020-08-12

- Formation Mechanism and Properties of In,P Codoped p-type ZnO Thin Film
- Chinese Journal of Luminescence Vol. 30, Issue 1, Pages: 12-18(2009)
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,吉林长春,130033
  2. 中国科学院研究所院北京,100049
  3. 吉林大学物理学院,吉林长春,130021
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Received：25 September 2008，
  
  Revised：02 January 1900，
  
  Published Online：20 February 2009，
  
  Published：20 February 2009
- 稿件说明：
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CHEN Zu-hong, YAO Bin, ZHENG Chang-ji, et al. Formation Mechanism and Properties of In,P Codoped p-type ZnO Thin Film[J]. Chinese journal of luminescence, 2009, 30(1): 12-18.
DOI：

CHEN Zu-hong, YAO Bin, ZHENG Chang-ji, et al. Formation Mechanism and Properties of In,P Codoped p-type ZnO Thin Film[J]. Chinese journal of luminescence, 2009, 30(1): 12-18. DOI：

摘要

利用射频磁控溅射在石英衬底上生长出铟磷共掺氧化锌薄膜(ZnO ∶ In

所用靶材为掺杂五氧化二磷(P

)和氧化铟(In

)的氧化锌(ZnO)陶瓷靶

掺杂质量分数分别为1.5%和0.3%

溅射气体为Ar和O

的混合气体。原生ZnO薄膜是绝缘的

600 ℃退火5 min后导电类型为n型

而800 ℃退火5 min后为p型。p型ZnO薄膜的电阻率、载流子浓度和霍尔迁移率分别为12.4 Ω·cm

1.6×10

-3

和3.29 cm

·V

-1

·s

-1

。X射线衍射测量结果表明所有样品都只有(002)衍射峰

并与相同条件下生长的未掺杂ZnO相比向大角度方向偏移

意味着In和P都占据Zn位。XPS测试结果表明在共掺ZnO薄膜中P不是取代O而是取代Zn。因此

铟磷共掺ZnO薄膜中

In和P都取代Zn

并且P

与2个锌空位(V

)形成P

-2V

复合受主

薄膜表现为p型。

Abstract

P codoped ZnO ∶ (In

P)] films were grown on quartz by radio frequency magnetron sputtering

the ZnO target was mixed with 1.5% P

and 0.3% In

and the mixing gas of Ar and O

was used as the sputtering gas. The as-grown ZnO ∶ (In

P) film shows insulating conduction

but n-type conductivity after annealing at 600 ℃ for 5 min

and p-type conduction after annealing at 800 ℃ for 5 min. The p-type ZnO:(In

P) has a resistivity of 12.4 Ω·cm

a carrier concentrativity of 1.6×10

-3

and a Hall mobility of 3.29 cm

·V

-1

·s

-1

.XRD mea-surement indicates that both the as-grown and annealed ZnO ∶ (In

P) films have a preferred (002) orientation and larger (002) diffraction angles than that of undoped ZnO prepared at the same conditions

implying that both In and P occupy Zn site in the ZnO ∶ (In

P). The XPS result confirm that the P substitutes Zn site (P

) but not O site in the ZnO ∶ (In

P). Therefore

it was suggested that both In and P substitute at Zn sites in the ZnO ∶ (In

P) and the P

combines with two Zn vacancies(V

) to form a P

-2V

acceptor complex

which is responsible to p-type conductivity of the ZnO ∶ (In

P).

关键词

Keywords

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