GaN-based quantum wells are the core structure of optoelectronic devices such as light-emitting diodes

laser diodes.Our experiments show that

In

0.2

Ga

0.8

N/GaN ternary alloys quantum wells and Al

0.15

In

0.01

Ga

0.84

N/In

0.2

Ga

0.8

N quaternary alloy quantum wells

two different quantum well structures for laser diode

have significant differences about the electrical properties and luminous efficiency.In this paper

we study onmicroscopic characteristics of these two differentquantum well structure.Through high-resolution X-ray diffraction

we got the satellite peaks of these two different alloys quantum wells by ω/2θ scanning.Using X-ray diffraction

we got the rocking curves by ω scanning of two kinds of MQW's symmetry face (002) and asymmetric face (101)

(102)

(103)

(104)

(105) and (201).Through atomic forcemicroscope

photolumine scence spectra and high resolution X-ray diffraction

it revealed the different nature of the macro factors of the In

0.2

Ga

0.8

N/GaNternary alloys and Al

0.15

In

0.01

Ga

0.84

N/In

0.2

Ga

0.8

N quaternary alloys.