The Influence of SiN Passivation Layer to the GaN Based Blue LED on Si Substrate

QIU Chong; LIU Jun-lin; ZHENG Chang-da; JIANG Le; JIANG Feng-yi

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The Influence of SiN Passivation Layer to the GaN Based Blue LED on Si Substrate

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- The Influence of SiN Passivation Layer to the GaN Based Blue LED on Si Substrate
- Chinese Journal of Luminescence Vol. 29, Issue 5, Pages: 840-844(2008)
- 作者机构：
  
  1. 晶能光电(江西)有限公司,江西南昌,330096
  2. 南昌大学教育部发光材料与器件工程研究中心,江西南昌,330047
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN312.8;O482.31
- Received：11 June 2008，
  
  Revised：24 August 2008，
  
  Published：20 September 2008
- 稿件说明：
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邱冲, 刘军林, 郑畅达, 姜乐, 江风益. SiN 钝化膜对Si衬底GaN基蓝光LED 性能影响[J]. 发光学报, 2008,29(5): 840-844

QIU Chong, LIU Jun-lin, ZHENG Chang-da, JIANG Le, JIANG Feng-yi. The Influence of SiN Passivation Layer to the GaN Based Blue LED on Si Substrate[J]. Chinese Journal of Luminescence, 2008,29(5): 840-844
邱冲, 刘军林, 郑畅达, 姜乐, 江风益. SiN 钝化膜对Si衬底GaN基蓝光LED 性能影响[J]. 发光学报, 2008,29(5): 840-844 DOI：

QIU Chong, LIU Jun-lin, ZHENG Chang-da, JIANG Le, JIANG Feng-yi. The Influence of SiN Passivation Layer to the GaN Based Blue LED on Si Substrate[J]. Chinese Journal of Luminescence, 2008,29(5): 840-844 DOI：

摘要

利用等离子辅助化学气相沉积(PECVD)系统在垂直结构Si衬底GaN基蓝光LED 芯片上生长了SiN 钝化膜

并对长有钝化膜及未作钝化处理的LED 在不同条件下进行了老化实验

首次研究了SiN 钝化膜对垂直结构Si衬底GaN基蓝光LED 可靠性的影响.实验发现:经过30mA、8℃、24h条件老化后

未作钝化处理的Si衬底GaN基蓝光LED 的平均光衰为%

而长有SiN 钝化膜的LED 平均光衰为6.06%

SiN 钝化膜有效地改善了LED 在各种老化条件下的光衰

另外

SiN 钝化膜缓解了Si衬底GaN基蓝光LED 老化过程中反向电压(

)的下降

但对老化后LED 的抗静电击穿能力(ESD)没有明显的影响.

Abstract

Currently GaN based blue light emission diode(LED) has already been widely used in spotlight of cars

back light of mobile phones

outdoor displays

etc.As the market of its applications is rapidly enlarged

the reliability of GaN based LED becomes the top issure of wide concern.In order to improve the reliability of vertical GaN based blue LED on Si substrate

SiN passivation layer was deposited by PECVD on the chip of LED

stresses in different condition were carried out to both passivated and unpassivated chips and encapsulated LEDs

their optical and electrical properties were investigated.After the aging under the condition of 30 mA

85℃ for 24 hours

the average luminous decay for encapsulated LEDs without SiN layer was 11.41%

but 6.06% for passivated one

lower luminous decay of SiN passivated GaN based blue LED was also found at the aging condition of RT

30 mA

96 hours

this was never reported in previous dissertations.In the aging experiment of chips under the 500 mA

RT condition

higher reverse voltage of SiN passivated LED was found after aging compared with that without SiN layer

but no obvious improvement for ESD property.

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Related Author

XIAO You-peng

MO Chun-lan

QIU Chong

JIANG Feng-yi

XU Yu-meng

BO Bao-xue

GAO Xin

TANG Ying-wen

Related Institution

Engineering Research Center for Luminescence Materials and Devices of the Education Ministry, Nanchang Uerversity

State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology

College of Physics and Information Engineering, Minnan Normal University, Zhangzhou 363000, China

National Engineering Technology Research Center for LED on Si Substrate, Nanchang University

National Institute of LED on Silicon Substrate, Nanchang University

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