Theoretical Analysis of Key Parameters of 980nm Optically Pumped Semiconductor Vertical External Cavity Surface Emitting Laser

CHENG Li-wen; LIANG Xue-mei; QIN Li; WANG Xiang-peng; SHENG Yang; NING Yong-qiang; WANG Li

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Theoretical Analysis of Key Parameters of 980nm Optically Pumped Semiconductor Vertical External Cavity Surface Emitting Laser

更新时间：2020-08-12

- Theoretical Analysis of Key Parameters of 980nm Optically Pumped Semiconductor Vertical External Cavity Surface Emitting Laser
- Chinese Journal of Luminescence Vol. 29, Issue 4, Pages: 713-717(2008)
- 作者机构：
  
  1. 中国科学院, 研究生院北京,100049
  2. 中国科学院, 长春光学精密机械与物理研究所,吉林长春,130033
  3. Crosslight公司中国分公司上海,200033
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN248.4
- Received：12 September 2007，
  
  Revised：24 November 2007，
  
  Published：20 July 2008
- 稿件说明：
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程立文, 梁雪梅, 秦莉, 王祥鹏, 盛阳, 宁永强, 王立军. 980nm OPS-VECSEL关键参数的理论分析[J]. 发光学报, 2008,29(4): 713-717

CHENG Li-wen, LIANG Xue-mei, QIN Li, WANG Xiang-peng, SHENG Yang, NING Yong-qiang, WANG Li-jun. Theoretical Analysis of Key Parameters of 980nm Optically Pumped Semiconductor Vertical External Cavity Surface Emitting Laser[J]. Chinese Journal of Luminescence, 2008,29(4): 713-717
程立文, 梁雪梅, 秦莉, 王祥鹏, 盛阳, 宁永强, 王立军. 980nm OPS-VECSEL关键参数的理论分析[J]. 发光学报, 2008,29(4): 713-717 DOI：

CHENG Li-wen, LIANG Xue-mei, QIN Li, WANG Xiang-peng, SHENG Yang, NING Yong-qiang, WANG Li-jun. Theoretical Analysis of Key Parameters of 980nm Optically Pumped Semiconductor Vertical External Cavity Surface Emitting Laser[J]. Chinese Journal of Luminescence, 2008,29(4): 713-717 DOI：

摘要

光抽运半导体垂直外腔面发射激光器(Optically Pumped Semiconductor Vertical External Cavity SurfaceEmission Laser)的输出特性受到诸多参数的影响

理论分析和模拟显得尤为重要.设计了一种以808 nm二极管激光耦合模块为光抽运光源

0.159

0.841

As/GaAs

0.94

0.06

为增益介质的980 nm光抽运垂直外腔面发射激光器

并借助于PICS3D软件计算了器件各种特性参数.分析了芯片半径、量子阱的周期数以及外腔镜反射率对器件性能的影响

特别是对阈值和光-光转换效率的影响.模拟结果表明

器件的半径影响光-光转换效率.量子阱个数和外腔镜反射率对器件的输出功率和光-光转换效率都有影响

所以要根据实际需要

设计、生长结构和进行实验.

Abstract

The performance of optically pumped semiconductor vertical external-cavity surface emitting laser(OPS-VECSEL)is influenced by many parameters

so the theoretical analysis and simulation are very important.We constructed a 980 nm optically pumped semiconductor vertical external-cavity surface emitting laser(OPS-VECSEL)with active region of In

0.159

0.841

As/GaAs

0.94

0.06

system pumped by 808 nm laser diode module.Employing the PICS3D software

the characteristic parameters of OPS-VECSEL were calculated.The performances of device especially the threshold and the optical-optical conversion efficiency were influenced by the chip radius

the number of quantum well and the reflectivity of external-cavity mirror.Calculation and analysis show that the chip radius affect optical-optical conversion efficiency.The output power and optical-optical conversion efficiency are influenced by the number of quantum wells and the reflectivity of external-cavity mirror.Thus we should design and grow the laser structure according to the need.

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Related Author

LIANG Xue-mei

LU Jin-kai

CHENG Li-wen

QIN Li

NING Yong-qiang

WANG Li-jun

DU Bao-xun

Liu Yumei

Related Institution

Aviation University of Air Force

Graduate School of Chinese Academy of Sciences

Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences Changchun

National Key Laboratory of High Power Semiconductor Lasers

Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021

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