ZnO is wide bandgap semiconductor. Its nanoparticles with uniform size distribution have caused much attention because the nanoparticles are bases of other nanostructures. In this work

ZnO nanoparticles were grown from newly produced zinc ketoacidoximate (C

8

H

16

N

2

O

8

Zn) precursor and from the precursor in NaCl and in mixture of NaCl and Li

2

CO

3

at different temperatures of 300~700℃ in muffle stove. The nano-particles were characterized by X-ray diffraction (XRD)

scan electron microscope (SEM)

absorption and photoluminescence spectroscopy. The growth mechanism and effects of NaCl plus Li

2

CO

3

and the growth temperatures on nanostructure morphology and size distribution were discussed. The ZnO nanoparticles were formed at 320℃ from pure zinc ketoacidoximate precursor or from the precursor in NaCl and in the mixture of NaCl and Li

2

CO

3

. All the nanoparticles were spherical. The average diameters were 6

6.5

7.0 nm correspondingly. Size distribution of ZnO nanoparticles grown from the pure precursor is wider while nanoparticles grown in NaCl and in mixture of NaCl and Li

2

CO

3

are almost uniform. When the growth temperature was decreased to 300℃

ZnO could not formed. When the growth temperature was increased to 450℃

the nanoparticles grew larger and the morphology was still spherical. With a further increase of the growth temperature

nanorods with larger diameter formed due to the melting of haloid and agglomerate of Zn precursors. The size and size distribution of the nanoparticles mainly depended on the growth temperatures. Absorption peaks of the nanoparticles grown at 320℃ was near 3.35 eV and the absorption peaks of nanoparticles synthesized in NaCl and in mixture of NaCl and Li

2

CO

3

red-shifted due to quantum size effects. The nanoparticles grown at 320℃ had strong UV luminescence at room temperature. Gaussian fitting indicated that the luminance of nanoparticles are consistent of luminescence of transition from oxygen vacancies and Zn interstitials to the valance band

luminescence of shallow impurities recombination and luminescence of band-edge recombination.