The electron energy distribution of n-type silicon tips (EED/n-Si) is simulated as a function of gate bias and compared with experimental results. The simulation is based on the theory of electron energy distribution of metals (EED/M) taking account of the penetration of electric field into semiconductor. The calculated results showed the electron energy of EED/n-Si will shift to low energy with penetration of electric field

higher the gate bias or the electric field on surface and more shift of the electron energy of (EED/n-Si) to low energy. The shift could be over 1.5 eV according to gate bias. The penetration of electric field into the n-Si is predominant in the shift of electron energy of EED/n-Si.