Electrical and Optical Properties of Ag Doped p-type ZnO Films and Its Homojunctions Properties

SUN Li-jie; ZHONG Sheng; ZHANG Wei-ying; WANG Zheng; LIN Bi-xia; FU Zhu-xi

doi:null

您当前的位置：

首页 >

文章列表页 >

Electrical and Optical Properties of Ag Doped p-type ZnO Films and Its Homojunctions Properties

更新时间：2020-08-12

- Electrical and Optical Properties of Ag Doped p-type ZnO Films and Its Homojunctions Properties
- Chinese Journal of Luminescence Vol. 29, Issue 2, Pages: 304-308(2008)
- 作者机构：
  
  中国科学技术大学, 物理系
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Received：25 October 2007，
  
  Revised：24 December 2007，
  
  Published：20 March 2008
- 稿件说明：
移动端阅览
孙利杰, 钟声, 张伟英, 王筝, 林碧霞, 傅竹西. Ag掺杂p型ZnO薄膜及其同质结的光电性质[J]. 发光学报, 2008,29(2): 304-308

SUN Li-jie, ZHONG Sheng, ZHANG Wei-ying, WANG Zheng, LIN Bi-xia, FU Zhu-xi. Electrical and Optical Properties of Ag Doped p-type ZnO Films and Its Homojunctions Properties[J]. Chinese Journal of Luminescence, 2008,29(2): 304-308
孙利杰, 钟声, 张伟英, 王筝, 林碧霞, 傅竹西. Ag掺杂p型ZnO薄膜及其同质结的光电性质[J]. 发光学报, 2008,29(2): 304-308 DOI：

SUN Li-jie, ZHONG Sheng, ZHANG Wei-ying, WANG Zheng, LIN Bi-xia, FU Zhu-xi. Electrical and Optical Properties of Ag Doped p-type ZnO Films and Its Homojunctions Properties[J]. Chinese Journal of Luminescence, 2008,29(2): 304-308 DOI：

摘要

采用磁控溅射技术在Si基片上生长了Ag掺杂的ZnO薄膜

XRD测试表明所得薄膜结晶性质良好

未出现Ag的分相。未掺杂和Ag掺杂氧化锌薄膜的低温(10K)光致发光(PL)谱显示:Ag的掺入使得中性施主束缚激子发射(D

X)显著减弱

并且在3.315eV处观测到了与Ag有关的施主-受主对(DAP)发射

受主缺陷的形成归因于掺入的Ag替位Zn。计算得到受主能级离价带顶约110meV。霍尔效应测得电阻率约0.1Ω·cm

迁移率约36cm

V·s

空穴浓度约1.7×10

-3

。在此基础上制备了ZnO:Ag/ZnO的同质结

测试显示了明显的整流特性

且反向漏电流很小。所有结果表明Ag掺杂的氧化锌薄膜已经转化为p型。

Abstract

Ag doped ZnO films have been fabricated on single-crystal Si (100) substrates by magnetron sputtering. XRD measurements show that the ZnO:Ag films have high crystallization quality without new phase related to Ag appearing. Doping with Ag can clearly decreases the neutral donor bound exciton emission showed by the low temperature (10 K) photoluminescence spectra; a donor-acceptor pair emission has been observed at 3.315 eV which is attributed to the formation of acceptor defect (Ag substitutes Zn). The level of AgZn acceptor is estimated to be about 110 meV above valence-band maximum. Hall measurements show that Ag doped ZnO films are p-type conductivity with the resistivity about 0.1 Ω·cm

hole concentration about 1.7×10

-3

and mobility about 36 cm

/V·s.The two-layer structured ZnO p-n homojunctions have been prepared on Si(100) substrates by depositing Ag doped p-type ZnO film on intrinsic n-type ZnO film using magnetron sputtering. The current-voltage (

) characteristics derived from the intrinsic ZnO/Ag doped ZnO two-layer structure clearly show the rectifying characteristics of typical p-n junctions.

关键词

Keywords

references

Look D C,Farlow G C,Reunchan Pakpoom,et al.Evidence for native-defect donors in n-type ZnO[J].Phys.Rev.Lett.,2005,95(22):225502-1-4.

Meyer B K,Alves H,Hofmann D M,et al.Bound exciton and donor-acceptor pair recombinations in ZnO[J].Phys.Stat.Sol.(b),2004,241(2):231-260.

Ryu Y R,Zhu S,Look D C,et al.Synthesis of p-type ZnO films[J].J.Crystal Growth,2000,216(1-4):330-334.

Hwang Dae-Kue,Oh Min-Suk,Lim Jae-Hong,et al.Effect of annealing temperature and ambient gas on phosphorus doped p-type ZnO[J].Appl.Phys.Lett.,2007,90(2):021106-1-3.

Tu Ming-Lung,Su Yan-Kuin,Ma Chun-Yang.Nitrogen-doped p-type ZnO films prepared from nitrogen gas radio-frequency magnetron sputtering[J].J.Appl.Phys.,2006,100(5):053705-1-4.

Wang Xin,Lu Youming,Shen Dezhen,et al.Ni/Au contact to N-doped p-type ZnO[J].Chin.J.Lumin.(发光学报),2006,27(3):426-428 (in Chinese).

Zhang Xia,Li Xiaomin,Chen Tonglai,et al.p-type conduction and optical properties of Zn1-xMgxO thin films grown by ultrasonic spray pyrolysis[J].Chin.J.Lumin.(发光学报),2006,26(4):503-508 (in Chinese).

Wang Xianghu,Yao Bin,Shen Dezhen,et al.Electrical and optical characteristics of Li-doped ZnO[J].Chin.J.Lumin.(发光学报),2006,27(6):945-948 (in Chinese).

Zeng Y J,Ye Z Z,Xu W Z,et al.Dopant source choice for formation of p-type ZnO:Li acceptor[J].Appl.Phys.Lett.,2006,88(6):062107-1-3.

Park C H,Zhang S B,Wei Suhuai.Origin of p-type doping difficulty in ZnO:The impurity perspective[J].Phys.Rev.B,2002,66(7):073202-1-3.

Yan Yanfa,Al-Jassim M M,Wei Suhuai.Doping of ZnO by group-IB elements[J].Appl.Phys.Lett.,2006,89(18):181912-1-3.

Kang Hong Seong,Ahn Byung Du,Kim Jong Hoon,et al.Structural,electrical,and optical properties of p-type ZnO thin films with Ag dopant[J].Appl.Phys.Lett.,2006,88(20):202108-1-3.

Duan Li,Lin Bixia,Zhang Weiying,et al.Enhancement of ultraviolet emissions from ZnO films by Ag doping[J].Appl.Phys.Lett.,88(23):232110-1-3.

Zhang Yang,Zhang Ziyu,Lin Bixia,et al.Effects of Ag doping on the photoluminescence of ZnO films grown on Si substrates[J].J.Phys.Chem.B,2005,109(41):19200-19203.

Wang X B,Song C,Geng K W,et al.Luminescence and Raman scattering properties of Ag-doped ZnO films[J].J.Phys.D:Appl.Phys.,2006,39(23):4992-4996.

Ye J D,Gu S L,Li F,et al.Correlation between carrier recombination and p-type doping in P monodoped and In-P codoped ZnO epilayers[J].Appl.Phys.Lett.,2007,90(15):152108-1-3.

Thonke K,Gruber Th,Teofilov N,et al.Donor-acceptor pair transitions in ZnO substrate material[J].Phys.B,2001,308-310:945-948.

Look D C,Reynolds D C,Litton C W,et al.Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy[J].Appl.Phys.Lett.,2002,81(10):1830-1832.

Tamura K,Makino T,Tsukazaki A,et al.Donor-acceptor pair luminescence in nitrogen-doped ZnO films grown on lattice-matched ScAlMgO4 (0001) substrates[J].Solid State Communications,2003,127(4):265-269.

Views

219

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Recent Developments of Light-emitting and Laser Devices Based on Zinc Oxide Micro-/Nanostructures

Related Author

LIU Maosheng

WANG Jinhui

KAN Caixia

SHI Daning

JIANG Mingming

LIU Maosheng

SHI Daning

JIANG Mingming

Related Institution

College of Physics， MIIT Key Laboratory of Aerospace Information Materials and Physics， Key Laboratory for Intelligent Nano Materials and Devices， Nanjing University of Aeronautics and Astronautics

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰