Emission Properties of DCJTB Doped Poly(N-vinylcarbazole)

TENG Feng; TANG Ai-wei

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Emission Properties of DCJTB Doped Poly(N-vinylcarbazole)

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- Emission Properties of DCJTB Doped Poly(N-vinylcarbazole)
- Chinese Journal of Luminescence Vol. 29, Issue 6, Pages: 957-961(2008)
- 作者机构：
  
  北京交通大学光电子技术研究所, 发光与光信息技术教育部重点实验室北京,100044
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN873.3;O482.31
- Received：20 October 2008，
  
  Revised：2008-11-3，
  
  Published：20 November 2008
- 稿件说明：
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滕枫, 唐爱伟. 掺杂DCJTB聚乙烯咔唑的发光性质[J]. 发光学报, 2008,29(6): 957-961

TENG Feng, TANG Ai-wei. Emission Properties of DCJTB Doped Poly(N-vinylcarbazole)[J]. Chinese Journal of Luminescence, 2008,29(6): 957-961
滕枫, 唐爱伟. 掺杂DCJTB聚乙烯咔唑的发光性质[J]. 发光学报, 2008,29(6): 957-961 DOI：

TENG Feng, TANG Ai-wei. Emission Properties of DCJTB Doped Poly(N-vinylcarbazole)[J]. Chinese Journal of Luminescence, 2008,29(6): 957-961 DOI：

摘要

研究了PVK:DCJTB体系的发光特性.实验结果表明

PVK:DCJTB薄膜光激发时

PVK和DCJTB之间存在能量传递

DCJTB的浓度从1%增加到2%

能量传递效率明显增强

但仍然不充分.引入Alq

层后的PVK:DCJTB/Alq

双层薄膜

PVK的发光被有效地抑制了

Alq

明显促进了PVK向DCJTB的能量传递效率

说明Alq

起到了能量传递的"桥梁"作用.而结构为ITO/PVK:DCJTB/Alq

/LiF(1nm)/Al的器件的电致发光光谱与光致发光光谱明显不同.电致发光时

Alq

层的发光的相对强度比光致发光时大许多

而且发光强度随着驱动电压的增加而增强

说明随电压的增加

有更多的空穴注入到Alq

层

致使载流子在Alq

层的复合几率随电场的增强而增大.

Abstract

It is effectivemethod to enhance brightness and to change emission colorby doping fluorescentdye in active layer oforganic lightemitting diodes (OLEDs).The energy transfer in the blend films is significant information of the devices to understand the excited state process.In this paper

the luminescence properties of the PVK:DCJTB blend film was studied.The results show that the efficiency ofenergy transfer from PVK to DCJTB is increased as the concentration of DCJTB changed from 1% to 2%

but it is not complete yet.The emission of PVK was obviously reduced by the introduction of Alq

layer to form doublelayer film PVK:DCJTB/Alq

.The layer of Alq

plays a energy transfer "bridge" role in the double-layer film.It is obviously differentbetween EL and PL spectra of the devicewith the structure of ITO/PVK:DCJTB/Alq

/LiF/Al.The emission of Alq

is relative strong in EL than that in PL

and the intensity of Alq

emission is enhanced with the increase of drive voltage.It is because that the recombination probability of electrons and holes is increased in the Alq

layerby increase of the numberof injected holes as the increase of electric field in the device.The result of this paper ismeaningful for the understanding of energy transfer in the blend films aswell as the recombination zone in the double-layer devices.

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