Fabrication and Field Emission Property of GaAs Microtips Array by Selective Liquid Phase Epitaxy

SUN Xiao-juan; HU Li-zhong; SONG Hang; LI Zhi-ming; JIANG Hong; MIAO Guo-qing; LI Da-bing

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Fabrication and Field Emission Property of GaAs Microtips Array by Selective Liquid Phase Epitaxy

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- Fabrication and Field Emission Property of GaAs Microtips Array by Selective Liquid Phase Epitaxy
- Chinese Journal of Luminescence Vol. 29, Issue 5, Pages: 901-904(2008)
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所, 激发态物理重点实验室,吉林长春,130033
  2. 大连理工大学三束材料改性国家重点实验室, 辽宁省微纳米技术及系统重点实验室,辽宁大连,116023
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN873.95;O462.4
- Received：13 June 2008，
  
  Revised：24 August 2008，
  
  Published：20 September 2008
- 稿件说明：
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孙晓娟, 胡礼中, 宋航, 李志明, 蒋红, 缪国庆, 黎大兵. GaAs微尖阵列的制备与场发射性能[J]. 发光学报, 2008,29(5): 901-904

SUN Xiao-juan, HU Li-zhong, SONG Hang, LI Zhi-ming, JIANG Hong, MIAO Guo-qing, LI Da-bing. Fabrication and Field Emission Property of GaAs Microtips Array by Selective Liquid Phase Epitaxy[J]. Chinese Journal of Luminescence, 2008,29(5): 901-904
孙晓娟, 胡礼中, 宋航, 李志明, 蒋红, 缪国庆, 黎大兵. GaAs微尖阵列的制备与场发射性能[J]. 发光学报, 2008,29(5): 901-904 DOI：

SUN Xiao-juan, HU Li-zhong, SONG Hang, LI Zhi-ming, JIANG Hong, MIAO Guo-qing, LI Da-bing. Fabrication and Field Emission Property of GaAs Microtips Array by Selective Liquid Phase Epitaxy[J]. Chinese Journal of Luminescence, 2008,29(5): 901-904 DOI：

摘要

利用选择液相外延的方法制备GaAs微尖阵列

通过扫描电子显微镜对微尖形貌进行了表征

并对此微尖阵列进行了场发射性能测试.结果表明

选择液相外延法制备的GaAs微尖呈金字塔状

两对面夹角为71°;微尖高度由生长窗口的尺寸决定

对底边为60μm的微尖

其高度约为42μm.此微尖阵列排列规则

具有场发射特性

开启电场约为5.1V/μm.发射电流稳定

当电场由8.0V/μm增加到11.9V/μm

发射电流由6μA增到74μA

在发射时间超过3h的情况下

电流波动不超过3%.另外

GaAs微尖阵列场发射的F-N曲线不为直线

分析表明是表面态和场渗透共同作用的结果.这对GaAs微尖阵列在场发射阴极方面的进一步研究具有重要的意义.

Abstract

GaAs microtips array are fabricated by selective liquid phase epitaxy(LPE).Scanning electron microscopy(SEM) images show that the microtip is pyramid-like with the angle of the opposite sides about 71°.The height of the GaAs microtip is depended on the size of the growth window.In the experiment

the growth window of 60 μm×60 μm results in the microtip height of 42 μm.Furthermore

the field emission property of the tips array is also investigated.Aturn-on field of 5.1 V/μm and a good current stability are obtained.The field emission current increases from 6 μA to 74 μA when the electric field changes from 8.0 V/μm to 11.9 V/μm.The current fluctuation is found not to exceed 3% over a period of 3 hours.Furthermore

the non-linear field emission F-N curve of GaAs microtips array is also studied.The influence of the surface states of electrons and the field penetration are considered to be the reason for the non-linear field emission F-N curve.This achievement reported here represents a significant step towards the application of GaAs microtips array as a field emission material.

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