Optical and Electrical Properties of N-doped ZnO

WANG Shuang-jiang; WU Hui-zhen; JIN Guo-fen; ZHANG Ying-ying; CHEN Xiao-song; XU Tian-ning

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Optical and Electrical Properties of N-doped ZnO

更新时间：2020-08-12

- Optical and Electrical Properties of N-doped ZnO
- Chinese Journal of Luminescence Vol. 29, Issue 3, Pages: 465-469(2008)
- 作者机构：
  
  浙江大学物理系, 固体光电子材料物理与器件实验室, 浙江, 杭州, 310027
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.4;O482.31
- Received：25 October 2007，
  
  Revised：24 December 2007，
  
  Published：20 May 2008
- 稿件说明：
移动端阅览
王双江, 吴惠桢, 金国芬, 张莹莹, 陈笑松, 徐天宁. 氮掺杂氧化锌薄膜的光电特性[J]. 发光学报, 2008,29(3): 465-469

WANG Shuang-jiang, WU Hui-zhen, JIN Guo-fen, ZHANG Ying-ying, CHEN Xiao-song, XU Tian-ning. Optical and Electrical Properties of N-doped ZnO[J]. Chinese Journal of Luminescence, 2008,29(3): 465-469
王双江, 吴惠桢, 金国芬, 张莹莹, 陈笑松, 徐天宁. 氮掺杂氧化锌薄膜的光电特性[J]. 发光学报, 2008,29(3): 465-469 DOI：

WANG Shuang-jiang, WU Hui-zhen, JIN Guo-fen, ZHANG Ying-ying, CHEN Xiao-song, XU Tian-ning. Optical and Electrical Properties of N-doped ZnO[J]. Chinese Journal of Luminescence, 2008,29(3): 465-469 DOI：

摘要

采用气体反应电子束蒸发法

氨气氛下在玻璃上沉积了氮掺杂氧化锌(ZnO)薄膜。AFM观察发现氨气氛下生长的氮掺杂氧化锌薄膜表面比未掺杂样品的粗糙度略高

且随氨气压的增加粗糙度也随之增加

这可能与氨气氛对ZnO生长表面的轻微腐蚀作用有关

但表面依然比较平整。XRD分析显示

(0002)衍射峰位没有发生移动

但是氮掺杂后衍射峰的线宽比未掺杂样品稍有增加

衍射峰的半峰全宽由非掺杂ZnO的0.261°增加到0.427°。氧化锌掺氮后电阻率提高了4~7个数量级

达到了降低ZnO中电子浓度的目的。

Abstract

ZnO was deposited on glass under NH3 gas ambience using electronic beam evaporation. AFM measurements indicate that the roughness of N-doped ZnO is a little bit higher than undoped ZnO

and it increases as the pressure of NH3 rises. However

the ZnO surface remains smooth. XRD measurement shows that the (0002) diffraction peaks remain constant for the different N-doped samples. The width of diffraction peak of N doped ZnO is 0.427°

which is a slightly broader than 0.261°of undoped ZnO. The resistivity of N-doped ZnO increases 4 to 7 times in magnitudes

which indicates the realization of reducing electronic concentration in ZnO films.

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