Properties of the Weak-coupling Magnetopolaron in a Semiconductor Quantum Well

JIAN Rong-hua; ZHAO Cui-lan

doi:null

您当前的位置：

首页 >

文章列表页 >

Properties of the Weak-coupling Magnetopolaron in a Semiconductor Quantum Well

更新时间：2020-08-12

- Properties of the Weak-coupling Magnetopolaron in a Semiconductor Quantum Well
- Chinese Journal of Luminescence Vol. 29, Issue 2, Pages: 215-220(2008)
- 作者机构：
  
  内蒙古民族大学, 物理与电子信息学院,内蒙古通辽,028043
- 作者简介：
- 基金信息：
  
  The project supported by National Natural Science Foundation of China(10347004);Hi
- DOI：
  CLC： O472.3;O469
- Received：24 June 2007，
  
  Revised：15 November 2007，
  
  Published：20 March 2008
- 稿件说明：
移动端阅览
简荣华, 赵翠兰. 半导体量子阱中弱耦合磁极化子的性质(英文)[J]. 发光学报, 2008,29(2): 215-220

JIAN Rong-hua, ZHAO Cui-lan. Properties of the Weak-coupling Magnetopolaron in a Semiconductor Quantum Well[J]. Chinese Journal of Luminescence, 2008,29(2): 215-220
简荣华, 赵翠兰. 半导体量子阱中弱耦合磁极化子的性质(英文)[J]. 发光学报, 2008,29(2): 215-220 DOI：

JIAN Rong-hua, ZHAO Cui-lan. Properties of the Weak-coupling Magnetopolaron in a Semiconductor Quantum Well[J]. Chinese Journal of Luminescence, 2008,29(2): 215-220 DOI：

摘要

采用线性组合算符和改进的LLP变分法

研究了在考虑电子自旋情况下无限深量子阱中弱耦合磁极化子的性质。导出了弱耦合磁极化子的声子平均数、基态能量和电子自旋能量与磁极化子基态能量之比的绝对值的表达式。并对两种不同阱材料的量子阱进行了数值计算

结果表明:磁极化子的声子平均数随电子-LO声子耦合常数和阱宽的增加而增大

并且最终随着阱宽的增加而趋于体情况下的极限值;由于电子自旋能的作用使磁极化子的基态能量由不考虑电子自旋下的一条分裂为两条

并且它随阱宽和电子-LO声子耦合常数的增加而减小

随回旋共振频率(磁场)的增加而增大。电子自旋作用能否忽略由回旋共振频率和阱材料本身的性质决定。

Abstract

The properties of the weak-coupling magnetopolaron in semiconductor quantum well were studied by using the linear combination operator and a modified LLP variational method considering the electron spin. The mean number of phonons

the ground state energy of the weak-coupling magnetopolaron and the ratio(absolute value) of the electron spin energy to the ground state energy in an infinite quantum well were derived. Numerical results show that the mean number of phonons increases with enhancing the electron-LO-phonon coupling constant and the well width

and at last approaches to the limiting value of the bulk case; the ground state energy of the magnetopolaron becomes two branches from one branch due to the influence of the electron spin

which decreases with increasing the well width and electron-LO-phonon coupling constant

and it also increases with increasing the cyclotron resonance frequency.It depends on the cyclotron resonance frequency and the properties of the well material whether the effect of the electron spin energy in the quantum well can be neglected.

关键词

Keywords

references

Dugaev V K,Litvinov V I,Dobrowolski W.Level quantization in the narrow-gap-semiconductor quantum well in a parallel magnetic field[J].Phys.Rev.B,2000,62(3):1905-1911.

Chen C Y,Lin D L,Jin P W,et al.Strong-coupling theory of quasi-two-dimensional polaron[J].Phys.Rev.B,1994,49(19):13680-13684.

Zhao Cuilan,Ding Zhaohua,Xiao Jinglin.Properties of a weak-coupling magnetopolaron in cylindrical quantum dot[J].Chin.J.Semiconductors (半导体学报),2005,26(10):1925-1928 (in Chinese).

Ding Zhaohua,Zhao Cuilan,Xiao Jinglin.Excited state of poralon in parabolic quantum wires[J] Chin.J.Lumin.(发光学报),2007,28(2):149-154 (in English).

Ding Zhaohua,Wang Guosheng,Ding Zhahua,et al.The dependence of the properties of optical polaron on coupting strength and magnetic field[J] Chin.J.Lumin.(发光学报),2007,28(4):485-488 (in English).

Callaway J.Quantum Theory of the Solid State[M].New York:Academic Press,1976

Wei Baohua,Yu Kinwah,Gu S W.Resonant frequency of impurity polaron in a quantum well[J].Commun.Thero.Phys.,1994,21(4):391-396.

Zheng Ruisheng,Ban Shiliang,Liang Xixia.Effects of interface and bulk optical phonons on polarons in a quantum well[J].Phys.Rev.B,1994,49(3):1796-1801.

Hellwege K H.Semiconductors Physics of Ⅱ-Ⅵ and Ⅰ -Ⅶ Compound Magnetic Semiconductor[M].Landolt-Brnstein,New series Group Ⅲ,Vol.17,Pt.a,Spring-Verlag,Berlin,1982

Kartheuser E.Polarons in Ionic Crystals and Polar Semiconductors[M].Amsterdam:North-Holland Publ.Co.New York,1972

Views

179

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Influence of Electric Field on Properties of Strong-coupling Magnetopolaron in Quantum Well

Excitation Energy of Polaron for Polyatomic Crystals in Magnetic Field

Vibrational Frequency of Strong-coupling Impurity Bound Polaron in Quantum Rods

Influence of the Coulomb Field on the Mean Number of Phonons for Strong-coupling Polaron in an Asymmetric Quantum Dot

Influence of Magnetic Field on Properties of Bound Magnetopolaron in an Asymmetric Quantum Dot

Related Author

XIAO Jing-lin

SHAN Shu-ping

XIAO Jing-lin

LIU Ya-min

WANG Cheng-shun

XIAO Jing-lin

WANG Dong-min

XU Jie

Related Institution

Department of Mathematics and Physics, Hebei Normal University of Science & Technology

Department of Physics and Electronic Information, Inner Mongolia National University

Inner Mongolia National University

Inner Mongolia Hulunbei′er College, Haila′er

College of Physics and Electronic Information, Inner Mongolia National University

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰