Diamond is one of the most important wide-band-gap semiconductor materials

and the study on the migration transport process of carriers in diamond can help to find out the potential application of diamond in different kinds of electronic devices and to know the material characteristics of diamond more clearly.The flight time of carriers in diamond under low electric field and low energy region is studied through Monte Carlo simulation method.The Monte Carlo simulation method is based on parabolic band model(

i.e.

nearly free electron approximation band model)and acoustic phonon scattering mechanism.The light absorption in diamond and Bragg reflection at the first Brillouin Zone boundary are considered in the simulation.The flight time distributions of holes in diamond under low electric field and low energy region are obtained through the Monte Carlo simulation

and compared with the reported experimental results.The simulation results are in agreement with the reported experimental results

which verifies the accuracy of the Monte Carlo simulation model.The simulation results shows that the acoustic phonon scattering mechanism is the dominant scattering mechanism in diamond under low electric field and low energy region.The simulation results also show that the relative simple parabolic band model can be considered when the migration transport process of carriers in diamond is studied

but the influence of light absorption in materials on the initial distributions of carriers should be considered when the migration transport process in thin sample is studied

moreover

the Bragg reflection of carriers at the first Brillouin Zone boundary should be considered when the intensity of electric field is relatively strong and the thickness of the sample is relatively large.