A great deal of work on study of polaron properties in semiconductor surface and interface was performed

since Ibach carried out low-energy electron diffraction experiments on ZnO and other semiconductor surface.Huybrechts proposed a linear combination operator method

by which the dependence of internal excited state properties of polaron on coupling strength was discussed.Kandmir

et al

.studied the properties of two-dimension magnetopolaron by using bound Landau state method.MuKhopadhyay

et al

.calculated polar correction of the first excited state of electron in parabolic quantum dot for different values of the electron-phonon coupling by using LLP method.Others also investigated the many relations between the properties of polaron and coupling strength.We discussed the dependence of the properties of optical polaron on coupling strength and magnetic field in this paper.The varied relation of ground state energy

and the first excited energy of optical polaron with coupling strength and magnetic field was derived by using the linear combination operator and unitary transformation methods.The numerical calculation indicates that the vibration frequency increase with increasing coupling parametert and magnetic field strength

because interaction between electron and crystal vibration falls and vibration increases with increasing coupling parameter and interaction between electron and magnetic field increases with increasing magnetic field strength.The numerical calculation also shows that the ground state energy and the first excited energy both increase with increasing coupling parameter and magnetic field strength

since interaction energy between electron and crystal vibration increase with increasing coupling parameter and interaction energy between electron and magnetic field increase with increasing magnetic field strength.