Structural and Optical Properties of High Quality Mg<sub>x</sub>Zn<sub>1-x</sub>O Films Grown by P-MBE

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Structural and Optical Properties of High Quality Mg_xZn_1-xO Films Grown by P-MBE

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- Structural and Optical Properties of High Quality Mg_xZn_1-xO Films Grown by P-MBE
- Chinese Journal of Luminescence Vol. 29, Issue 2, Pages: 309-312(2008)
- 作者机构：
  
  中国科学院长春光学精密机械与物理研究所, 激发态物理重点实验室,吉林长春,130033
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Published：20 March 2008，
  
  Received：17 September 2007，
  
  Revised：28 October 2007，
- 稿件说明：
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Structural and Optical Properties of High Quality Mg_xZn_1-xO Films Grown by P-MBE. [J]. Chinese journal of luminescence, 2008, 29(2): 309-312.
DOI：

Structural and Optical Properties of High Quality Mg_xZn_1-xO Films Grown by P-MBE. [J]. Chinese journal of luminescence, 2008, 29(2): 309-312. DOI：

摘要

利用等离子体辅助分子束外延(P-MBE)的方法

在c平面的蓝宝石衬底上制备了高质量的Mg

1-x

O合金薄膜。通过改变Mg源的温度

得到了不同Mg组份的Mg

1-x

O合金薄膜;通过引入ZnO的低温缓冲层

有效地提高了Mg

1-x

O合金薄膜的结晶质量。随着Mg组份的增加

1-x

O的X射线衍射的(002)衍射峰逐渐向大角度方向移动。对样品进行光致发光(PL)谱的测量

在室温下观察到了较强的紫外发光。随Mg浓度的增加

紫外发光峰向高能侧移动

并且发光峰逐渐展宽。通过对x=0.15的样品进行变温光谱的测量研究了紫外发光峰起因

得到了Mg

1-x

O的发光是来自于自由激子的发光。自由激子束缚能为54meV。

Abstract

ZnO is a wide band-gap semiconductor with good electrical and optical properties. ZnO has higher exciton binding energy of 59 meV at room temperature

leading to a lower threshold

and is favorable for efficient operation of optical devices. Short wavelength devices based on ZnO have become even more interesting. On the other hand

band gap devices based on ZnO/ZnMgO superlattices or quantum wells can confine both excitons and photons in the low dimensions

making the stimulated exciton-related emission process more efficient. Therefore

keeping focus on the Mg

1-x

O films for purpose of exploring its potential applications in ultraviolet optoelectronics is more and more important.High quality Mg

1-x

O alloy films have been grown by plasma-assisted molecular beam epitaxy on c-sapphire (c-Al

) substrate. The growth temperature was 800℃

the temperature of the zinc source is fixed at 245℃

and the flow rate of oxygen is 0.8 sccm. The Mg

1-x

O films were obtained with different Mg contents by changing the temperature of the Mg source. The quality of the Mg

1-x

O films was improved by growing ZnO buffer layers at low temperature. Their crystal structures are characterized by X-ray diffraction spectroscopy (XRD). The XRD patterns indicate all the Mg

1-x

O films with the (002) preference orientation of hexagonal wurtzite structure. When x value is varied from 0 to 0.15

the (002) diffraction peak of Mg

1-x

O shifts to the large angle side with increasing Mg contents

and the full wide at half maximum (FWHM) of the diffraction peak is widen with increasing Mg contents. The lattice constant of c-axis decreases from 0.5205 nm to 0.5189 nm as the Mg content increased from 0 to 0.15. The FWHM is only 0.145° for the Mg

0.15

0.85

O film

which exhibited the high quality of the Mg

1-x

O films. The intense ultraviolet emission was shown in photoluminescence spectra at room temperature

which shifts from 3.29 eV(x=0) to 3.54 eV(x=0.15) with increasing x values. The bandgaps of the films were evaluated by using the squared absorption coefficient (α

) of Mg

1-x

O films as a function of photon energy. The origin of the ultraviolet emission is studied by the PL spectra measured at the temperature from 80 K to 280 K. The emission peaks show a redshift

the FWHM of the emission peak widen and the intensities of the emission peak decreased with increasing the temperature. The temperature-dependent PL-integrated intensity of Mg

1-x

O were fitting by the equation:

/[1+

exp(-

)] (where E is the activation energy of the thermal quenching process

kB is Boltzmann constant

is the emission intensity at 0 K

is the thermodynamic temperature

and A is a constant). A fit of the experimental data to the equation yields

=54 meV

which agrees well with the exci-ton binding energy of 59 meV for bulk ZnO. Therefore

the ultraviolet emission peak in PL spectra of the Mg

1-x

O alloy films is attributed to the free exciton emission

indicating the high quality of Mg

1-x

O film.

关键词

氧化锌镁等离子体辅助分子束外延光致发光

Keywords

MgxZn1-xOP-MBEphotoluminescence

references

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Ohtomo A,Kawasaki M,Masubuchi K,et al.MgxZn1-xO as an Ⅱ-Ⅴ wide gap semiconductor alloy[J].Appl.Phys.Lett.,1998,72(19):2466-2468.

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Zhang Xia,Li Xiaomin,Chen Tonglai,et al.p-type conduction and optical properties of Zn1-xMgxO thin films grown by utlrasonic spray pyrolysis[J].Chin.J.Lumin.(发光学报),2006,27(4):503-508 (in Chinese).

Wei Zhipeng,Wu Chunxia,Lu Youming,et al.The optical property of MgZnO alloy and ZnO/MgZnO[J].Chin.J.Lumin.(发光学报),2006,27(5):831-833 (in Chinese).

Sadofev S,Blumstengel S,Cui J.Growth of high-quality ZnMgO epilayers and ZnO/ZnMgO quantum well structures by radical-source molecular-beam epitaxy on sapphire[J].Appl.Phys.Lett.,2005,87(9):091903-1-3.

Dexter D L.Proceedings of Atlantic City Photoconductivity Conference[M].Wiley,New York,1954,155-183.

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YANG Jian

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Related Institution

School of Flexible Electronics（Future Technologies） & Institute of Advanced Materials（IAM）， Nanjing Tech University

School of Physics， Northeast Normal University

Institute of Novel Semiconductors， School of Microelectronics， Shandong University

Institute of Semiconductor Research， Guangdong Academy of Sciences

Shandong Inspur Huaguang Optoelectronics Co.， Ltd.

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Structural and Optical Properties of High Quality MgxZn1-xO Films Grown by P-MBE

DOI：

摘要

Abstract

关键词

Keywords

references

Structural and Optical Properties of High Quality Mg_xZn_1-xO Films Grown by P-MBE