Studies on the Growth and Photoelectric-properties of RF-assisted N Doped ZnO Films

SU Jian-feng; YAO Ran; ZHONG Ze; FU Zhu-xi

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Studies on the Growth and Photoelectric-properties of RF-assisted N Doped ZnO Films

更新时间：2020-08-12

- Studies on the Growth and Photoelectric-properties of RF-assisted N Doped ZnO Films
- Chinese Journal of Luminescence Vol. 29, Issue 2, Pages: 299-303(2008)
- 作者机构：
  
  中国科学技术大学, 物理系
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Published：20 March 2008，
  
  Received：25 October 2007，
  
  Revised：24 December 2007，
- 稿件说明：
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SU JIAN-FENG, YAO RAN, ZHONG ZE, et al. Studies on the Growth and Photoelectric-properties of RF-assisted N Doped ZnO Films. [J]. Chinese journal of luminescence, 2008, 29(2): 299-303.
DOI：

SU JIAN-FENG, YAO RAN, ZHONG ZE, et al. Studies on the Growth and Photoelectric-properties of RF-assisted N Doped ZnO Films. [J]. Chinese journal of luminescence, 2008, 29(2): 299-303. DOI：

摘要

在MOCVD设备中采用改进的射频辅助生长装置

通过裂解N

及N-Al共掺杂的方法进行ZnO的p型掺杂研究。通过二次离子质谱(SIMS)、X射线衍射(XRD)、原子力显微镜(AFM)、光致发光(PL)谱等方法分析了薄膜中N杂质的浓度

以及射频功率与晶体质量、表面形貌以及光学特性之间的关系

并与Al掺杂和N掺杂的ZnO薄膜进行对比。实验结果表明

N掺杂的浓度高达10

-3

;N-Al共掺杂极大地增加了ZnO的成核速率

其主要原因是N离化所起的作用;N-Al共掺的ZnO薄膜显示出p型性质

而N掺杂的ZnO薄膜由于N原子处于非激活状态而呈现高阻

这说明N-Al共掺杂对ZnO中N原子的活化起到一定作用。

Abstract

In past

many papers reported that it was difficult to obtain p-ZnO through N

splitting. We studies the properties of ZnO films through N

splitting and N-Al co-doping by our MOCVD system which was improved with RF assisted equipment. The data of SIMS showed that the N concentration reached to 10

20~21

-3

in ZnO films. On this basic

we have studied the growth and photoelectric-properties of N-Al co-doped ZnO films

the effect of RF power on the crystal quality

surface morphologies and optical properties

through XRD

AFM and PL methods

to compare the properties of N-Al co-doped ZnO films. The result of our experiments indicates that the growth rate of ZnO films increases with increasing N splitting

N-Al co-doped ZnO films display p-type property

but the resistance of N doped ZnO films was rather high which was caused by non-activated N in ZnO films

this revealed that the N-Al co-doping facilitates the activation of N in ZnO films.

关键词

金属有机化学气相沉积射频辅助N离化N-Al共掺杂

Keywords

MOCVDRF-assistedN splittingN-Al co-doping

references

Park C H,Zhang S B,Wei Suhuai.Origin of p-type doping difficulty in ZnO:The impurity perspective[J].Phys.Rev.B,2002,66(7):073202-1-3.

Yamamoto T,Katayama-Yoshida H.Solution using a codoping method to unipolarity for the fabrication of p-type ZnO[J].Jpn.J.Appl.Phys.,1999,38(2B):L166-L169.

Zeng Y J,Ye Z Z,Xu W Z,et al.Dopant source choice for formation of p-type ZnO:Li acceptor[J].Appl.Phys.Lett.,2006,88(6):062107-1-3.

Zhuge F,Zhu L P,Ye Z Z,et al.ZnO p-n homojunctions and ohmic contacts to Al-N co-doped p-type ZnO[J].Appl.Phys.Lett.,2005,87(9):092103-1-3.

Wang Xin,Lu Youming,Shen Dezhen,et al.Ni/Au contact to N-doped p-type ZnO[J].Chin.J.Lumin.(发光学报),2006,27(3):426-428 (in Chinese).

Zhang Xia,Li Xiaomin,Chen Tonglai,et al.p-type conduction and optical properties of Zn1-xMgxO thin films grown by ultrasonic spray pyrolysis[J].Chin.J.Lumin.(发光学报),2006,27(4):503-508 (in Chinese).

Zhang Zhenzhong,Wei Zhipeng,Lu Youming,et al.p-type ZnO and ZnO p-n homojunction LED by using activated N2 doping[J].Chin.J.Lumin.(发光学报),2006,27(6):1026-1028 (in Chinese).

Lee E C,Kim Y S,Jin Y G,et al.Compensation mechanism for N acceptors in ZnO[J].Phys.Rev.B,2001,64(8):085120-1-5.

Ozgur U,Alivov Y I,Liu C,et al.A comprehensive review of ZnO materials and devices[J].J.Appl.Phys.,2005,98(4):041301-1-103.

Wei Z P,Lu Y M,Shen D Z,et al.Room temperature p-n ZnO blue-violet light-emitting diodes[J].Appl.Phys.Lett.,2007,90(4):042113-1-3.

Fu Zhuxi,Lin Bixia,Zu Jie.Photoluminescence and structure of ZnO films deposited on Si substrates by MOCVD[J].Thin Solid Films,2002,402(1-2):302-306.

Jiao Shujie,Liang Hongwei,Lu Youming,et al.p-type ZnO thin films prepared by plasma assisted molecular beam epitaxy[J].Chin.J.Lumin.(发光学报),2004,25(4):460-462 (in Chinese).

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