Photoluminescence of Si/SiN<sub>x</sub>/SiO<sub>2</sub> Multilayers

CHEN Qing-yun; DUAN Man-yi; ZHOU Hai-ping; DONG Cheng-jun; WEI Yi; JI Hong-xuan; HUANG Jin

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Photoluminescence of Si/SiN_x/SiO₂ Multilayers

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- Photoluminescence of Si/SiN_x/SiO₂ Multilayers
- Chinese Journal of Luminescence Vol. 29, Issue 2, Pages: 363-370(2008)
- 作者机构：
  
  1. 四川师范大学物理与电子工程学院, 固体物理研究所低维结构物理实验室,四川成都,610068
  2. 重庆邮电大学, 光电工程学院重庆,400065
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Published：20 March 2008，
  
  Received：11 July 2007，
  
  Revised：23 September 2007，
- 稿件说明：
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CHEN QING-YUN, DUAN MAN-YI, ZHOU HAI-PING, et al. Photoluminescence of Si/SiN_x/SiO₂ Multilayers. [J]. Chinese journal of luminescence, 2008, 29(2): 363-370.
DOI：

CHEN QING-YUN, DUAN MAN-YI, ZHOU HAI-PING, et al. Photoluminescence of Si/SiN_x/SiO₂ Multilayers. [J]. Chinese journal of luminescence, 2008, 29(2): 363-370. DOI：

摘要

采用射频磁控溅射法

制备了具有强光致可见发光的纳米Si/Si/SiN

/SiO

多层膜

利用傅立叶红外吸收(FTIR)谱

光致发光(PL)谱对其进行了研究。用260nm光激发得到的PL谱中观察到高强度的392nm(3.2eV)和670nm(1.9eV)光致发光峰

分析认为它们分别来自于缺陷态≡Si-到价带顶和从导带底到缺陷态≡Si-的辐射跃迁而产生的光致激发辐射复合发光。PL谱中只有370nm(3.4eV)处发光峰的峰位会受退火温度的影响

结合FTIR谱认为370nm发光与低价氧化物-SiOx(x

2. 0)结合体有密不可分的关系。当SiO

层的厚度增大时

发光强度有所增强

800℃退火后出现最强发光

认为具有较大SiO

层厚度的Si/Si/SiN

/SiO

结构多层膜更有利于退火后形成Si-N网络

能够得到更高效的光致发光。用量子限制-发光中心(QCLC)模型解释了可能的发光机制

并建立了发光的能隙态(EGS)模型。

Abstract

Si/Si/SiN

/SiO

multilayers are prepared on Si(100) at room temperature by radio-frequency (RF) magnetron sputtering. The optical properties of these films have been investigated using Fourier Transform Infrared (FTIR) absorption and photoluminescence (PL) spectra

the origins of emission bands in PL spectra are discussed in detail. Strong photoluminescence at 392 nm(3.2 eV) and 670 nm (1.9 eV) is observed

which are caused by the electronic transitions of ≡Si

→

(the valence band top) and

( the conduction band bottom) →≡Si

. It is found that the stretching vibration peak of the Si-O bonds around 1 056 cm

-1

in FTIR spectra shifts toward to the lower wave numbers at a high annealing temperature. Accordingly

the PL peak at 370 nm depends upon the annealing temperature

it was suggested that the peak appeared at 370 nm can be related to the SiO

2. 0)defect states level. The Si-N bonds will form again in the Si-rich environment. When the thickness of SiO

increases

the PL intensity of Si/Si/SiN

/SiO

multilayers increases. After annealing at 800℃

the strongest PL intensity appears. It was suggested that the bigger thickness of SiO

in Si/Si/SiN

/SiO

multilayers

the more beneficial of forming Si-N net in film

and the more effectively PL. The strong PL is relevant with the content of silicon dangling bond ≡Si

nitride dangling bond N

and oxygen-related defects. The quantum confinement-luminescence center (QCLC) model was adopted to interpret the PL results. The gap state model was built in order to explain the PL phenomenon.

关键词

Si/Si/SiNx/SiO2多层膜红外吸收光致发光

Keywords

Si/Si/SiNx/SiO2 multilayersFourier transform infrared absorptionphotoluminescence

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⁰

Photoluminescence of Si/SiNx/SiO2 Multilayers

DOI：

摘要

Abstract

关键词

Keywords

references

Photoluminescence of Si/SiN_x/SiO₂ Multilayers