Study on Optical Properties of p-type MgZnO Fabricated by MOCVD

DONG Xin; ZHAO Wang; ZHANG Bao-lin; LI Xiang-ping; DU Gou-tong

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Study on Optical Properties of p-type MgZnO Fabricated by MOCVD

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- Study on Optical Properties of p-type MgZnO Fabricated by MOCVD
- Chinese Journal of Luminescence Vol. 29, Issue 1, Pages: 129-132(2008)
- 作者机构：
  
  1. 大连理工大学, 物理与光电工程学院,辽宁大连,116033
  2. 吉林大学电子科学与工程学院, 集成光电子国家重点实验室,吉林长春,130012
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3;O482.31
- Received：25 August 2007，
  
  Revised：24 November 2007，
  
  Published：20 January 2008
- 稿件说明：
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董鑫, 赵旺, 张宝林, 李香萍, 杜国同. p型MgxZn1-xO薄膜材料的制备与光学特性[J]. 发光学报, 2008,29(1): 129-132

DONG Xin, ZHAO Wang, ZHANG Bao-lin, LI Xiang-ping, DU Gou-tong. Study on Optical Properties of p-type MgZnO Fabricated by MOCVD[J]. Chinese Journal of Luminescence, 2008,29(1): 129-132
董鑫, 赵旺, 张宝林, 李香萍, 杜国同. p型MgxZn1-xO薄膜材料的制备与光学特性[J]. 发光学报, 2008,29(1): 129-132 DOI：

DONG Xin, ZHAO Wang, ZHANG Bao-lin, LI Xiang-ping, DU Gou-tong. Study on Optical Properties of p-type MgZnO Fabricated by MOCVD[J]. Chinese Journal of Luminescence, 2008,29(1): 129-132 DOI：

摘要

通过金属有机化学汽相沉积(MOCVD)法在GaAs衬底上生长出了Mg

1-x

O薄膜

通过氧气气氛下的高温退火使得衬底中的As原子通过扩散作用进入薄膜形成受主

得到p型的Mg

1-x

O薄膜。退火前后XPS谱中As(3d)峰的对比表明

1-x

O薄膜中存在As。电学测试结果表明:退火对样品的电阻率和载流子浓度的影响很大。这是长时间的氧气退火使得氧空位数目明显减少

从而使Zn—O键数量显著增加造成的。在样品的X射线衍射(XRD)谱中

p型样品的(002)衍射峰明显弱于n型样品。而在二者的光致发光(PL)谱中

都存在着很强的近带边发射(NBE)峰和较弱的深能级发射(DLE)峰

p型样品的NBE峰明显较弱而DLE峰却很强。这些现象是由于As原子的扩散

使薄膜中产生了新的缺陷能级

导致能级间的激子复合更加复杂。稳定的p型Mg

1-x

O薄膜的获得为制备Mg

1-x

O同质结和发光二极管奠定了基础。

Abstract

p-type Mg

1-x

O film was grown on semi-insulating GaAs substrate by metal-organic chemical vapor deposition. The arsenic atoms

which acted as the acceptors in the film

were diffused from the substrates when the film was annealed in oxygen ambient at 700℃. And the cause of formation about p-type film was also discussed. The measurements

such as the XPS

HALL

XRD and PL were carried out. The existence of As in the film was proved by XPS. The resistivities and carrier concentrations of the film were measured by HALL effect measurement and the effect of anneal in the oxygen on them were discussed. The (002) peak in the XRD pattern and the NBE peak in the PL spectra of n-MgZnO were both stronger than that of p-MgZnO. The reason was believed that the new defects were introduced by As diffusion.

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