The study of the temperature dependence of photofluorescence in self-assembled quantum dots (QDs) is essentially important for the realization of room temperature efficient photoelectronic devices.The temperature dependence of photofluorescence of serf-assembled QDs will be directly determined by the carrier dynamics process in self-assembled QDs.As the temperature increases

the carrier will be thermal excited into the wetting layer from the ground states of an ensemble of QDs with difference sizes and then some of them will be recaptured by other QDs

i.e

.thermal carrier transfer will take place between the ensemble of QDs with difference sizes when the temperature increases. In this paper

the temperature dependence of the photofluorescence of self-assembled QDs was simulated by using a steady-state rate equation model which takes into account the carrier thermally transfer effect in self-assembled quantum dots.The temperature dependence of photofluorescenee intensity of three QDs groups with different ground state energy was emphatically investigated.The results show that

with the temperature in-creasing

the photofluorescence intensity of QDs with lower ground state energy becomes stronger while the photofluorescence intensity of QDs with higher ground state energy becomes weaker

and when the temperature reaches a certain value

the thermally quenching of the photofluorescence of all QDs will take place.