Structure Properties of InN Quantum Dots in GaN Semiconductor

CHEN Shan-shan; ZHENG Jiang-hai; LI Shu-ping; KANG Jun-yong

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Structure Properties of InN Quantum Dots in GaN Semiconductor

更新时间：2020-08-11

- Structure Properties of InN Quantum Dots in GaN Semiconductor
- Chinese Journal of Luminescence Vol. 28, Issue 1, Pages: 88-92(2007)
- 作者机构：
  
  厦门大学, 物理系/半导体光子学研究中心,福建厦门,361005
- 作者简介：
- 基金信息：
  
  Project supported by the Major State Basic Research Development Program of China(001
- DOI：
  CLC： O471.5
- Received：05 August 2004，
  
  Revised：15 October 2006，
  
  Published：20 January 2007
- 稿件说明：
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陈珊珊, 郑江海, 李书平, 康俊勇. GaN半导体中InN量子点的结构性质[J]. 发光学报, 2007,28(1): 88-92

CHEN Shan-shan, ZHENG Jiang-hai, LI Shu-ping, KANG Jun-yong. Structure Properties of InN Quantum Dots in GaN Semiconductor[J]. Chinese Journal of Luminescence, 2007,28(1): 88-92
陈珊珊, 郑江海, 李书平, 康俊勇. GaN半导体中InN量子点的结构性质[J]. 发光学报, 2007,28(1): 88-92 DOI：

CHEN Shan-shan, ZHENG Jiang-hai, LI Shu-ping, KANG Jun-yong. Structure Properties of InN Quantum Dots in GaN Semiconductor[J]. Chinese Journal of Luminescence, 2007,28(1): 88-92 DOI：

摘要

采用第一性原理模拟计算纤锌矿结构GaN半导体中InN量子点的结构性质。建立64和128个原子的超原胞量子点模型

进行结构优化以获得稳定的吻合实际的系统

并模拟分析电子结构。从态密度空间分布图看到不同轴向的量子势阱形状各异、深度不一

说明量子点的限域效应存在着各向异性的特点。

轴极化方向引起量子点结构带边的弯曲形状与传统的量子阱结构不同

使得电子空穴没有发生空间分离

有利于电子空穴的跃迁几率的提高。

Abstract

Using the first-principles calculation with 64 and 128 atom supercells the geometric and electronic structures of InN quantum dots(QDs)embedded in wurtzite GaN were simulated.After optimizing the stress and total energies

electronic structures of the stable systems were further calculated.The electronic densities of states show distinguishing quantum-confine-effects along different axes.Moreover

the curves of energy band edge appear in InN QDs.Compared with the typical band-edge shape of quantum well under the polarization that leads to the separation of electrons and holes in space

we found that the separation problem could be eliminated due to the curves of energy band edge in QDs

which is favourable for enhancement of the transition probability of the electrons and holes.

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