ZnO p-n Junctions Grown on Silicon and Their Structural, Optical and Electrical Properties

XU Xiao-liang; YANG Xiao-jie; XIE Jia-chun; XU Chuan-ming; XU Jun; LIU Hong-tu; SHI Chao-s

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ZnO p-n Junctions Grown on Silicon and Their Structural, Optical and Electrical Properties

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- ZnO p-n Junctions Grown on Silicon and Their Structural, Optical and Electrical Properties
- Chinese Journal of Luminescence Vol. 25, Issue 3, Pages: 295-299(2004)
- 作者机构：
  
  1. 中国科学技术大学, 物理系,安徽合肥,230026
  2. 中国科学技术大学, 精密机械与精密仪器系,安徽合肥,230027
  3. 中国科学院结构分析重点实验室, 安徽, 合肥, 230026
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304.21;TN304.12
- Received：19 March 2003，
  
  Revised：12 May 2003，
  
  Published：20 May 2004
- 稿件说明：
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许小亮, 杨晓杰, 谢家纯, 徐传明, 徐军, 刘洪图, 施朝淑. 以硅为衬底的ZnO p-n结的制备及其结构、光学和电学特性[J]. 发光学报, 2004,25(3): 295-299

XU Xiao-liang, YANG Xiao-jie, XIE Jia-chun, XU Chuan-ming, XU Jun, LIU Hong-tu, SHI Chao-shu. ZnO p-n Junctions Grown on Silicon and Their Structural, Optical and Electrical Properties[J]. Chinese Journal of Luminescence, 2004,25(3): 295-299
许小亮, 杨晓杰, 谢家纯, 徐传明, 徐军, 刘洪图, 施朝淑. 以硅为衬底的ZnO p-n结的制备及其结构、光学和电学特性[J]. 发光学报, 2004,25(3): 295-299 DOI：

XU Xiao-liang, YANG Xiao-jie, XIE Jia-chun, XU Chuan-ming, XU Jun, LIU Hong-tu, SHI Chao-shu. ZnO p-n Junctions Grown on Silicon and Their Structural, Optical and Electrical Properties[J]. Chinese Journal of Luminescence, 2004,25(3): 295-299 DOI：

摘要

分别在n型半绝缘Si、弱n(n

)以及强n(n

)型Si片(100)面上用射频磁控反应溅射法和直流磁控反应溅射法制备了p型ZnO薄膜以及ZnO同质pn结。其中在生长p型ZnO时

反应室中通以过量的氧。对上述p型和n型ZnO薄膜进行了X射线衍射测量

在34.1°附近得到了0.3°左右半峰全宽的ZnO(002)衍射峰。ZnO薄膜的原子力显微镜图像上可见六角型的自组装结构。阴极射线荧光的测量显示了位于390nm的紫外特征峰。用

I-V

特性仪测量了上述ZnO p-n结原型器件的

I-V

电学输运曲线

其正向显示了约为1.1V的阈值

与日美科研人员用直流溅射和扩散法制备的ZnO p-n结相似

但反向特性明显优于他们的。

Abstract

The p-ZnO and the ZnO p-n homojunctions on n-Si(110) were grown by the methods of RF and DC reaction magnetron sputtering. An oxygen rich condition has been kept in growing process of the p-ZnO. The FWHM of the ZnO (002) diffraction peaks are 0.3° obtained by XRD measurements. A hexagonal self-assembled structure of the ZnO films is shown by atomic force microscopy. The 390 nm UV emission peak of the ZnO films present in the cathodoluminescence spectra. The

I-V

property of the ZnO p-n junction was measured by an

I-V

character. The curve indicates a value of 1.1 volts forward threshold

which is equal to the results of the ZnO p-n junction grown in Japan and America using DC sputtering method and diffusion method; meanwhile the backward characteristics of our sample is much better.

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