Influence of Thermal Annealing to the Characteristics of AlGaInP/GaInP Multiple Quantum Wells LED Wafers

LI Shu-ti; FAN Guang-han; ZHOU Tian-ming; SUN Hui-qing; WANG Hao; ZHENG Shu-wen; GUO Zhi-y

doi:null

您当前的位置：

首页 >

文章列表页 >

Influence of Thermal Annealing to the Characteristics of AlGaInP/GaInP Multiple Quantum Wells LED Wafers

更新时间：2020-08-11

- Influence of Thermal Annealing to the Characteristics of AlGaInP/GaInP Multiple Quantum Wells LED Wafers
- Chinese Journal of Luminescence Vol. 25, Issue 5, Pages: 510-514(2004)
- 作者机构：
  
  华南师范大学光电子材料与技术研究所,广东广州,510631
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3;O482.31
- Received：15 September 2003，
  
  Revised：2003-12-24，
  
  Published：20 September 2004
- 稿件说明：
移动端阅览
李述体, 范广涵, 周天明, 孙慧卿, 王浩, 郑树文, 郭志友. 退火对AlGaInP/GaInP多量子阱LED外延片性能的影响[J]. 发光学报, 2004,(5): 510-514

LI Shu-ti, FAN Guang-han, ZHOU Tian-ming, SUN Hui-qing, WANG Hao, ZHENG Shu-wen, GUO Zhi-you. Influence of Thermal Annealing to the Characteristics of AlGaInP/GaInP Multiple Quantum Wells LED Wafers[J]. Chinese Journal of Luminescence, 2004,(5): 510-514
李述体, 范广涵, 周天明, 孙慧卿, 王浩, 郑树文, 郭志友. 退火对AlGaInP/GaInP多量子阱LED外延片性能的影响[J]. 发光学报, 2004,(5): 510-514 DOI：

LI Shu-ti, FAN Guang-han, ZHOU Tian-ming, SUN Hui-qing, WANG Hao, ZHENG Shu-wen, GUO Zhi-you. Influence of Thermal Annealing to the Characteristics of AlGaInP/GaInP Multiple Quantum Wells LED Wafers[J]. Chinese Journal of Luminescence, 2004,(5): 510-514 DOI：

摘要

采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片.研究表明退火对外延片性能有重要影响.与未退火样品相比

460℃退火15min

外延片p型GaP层的空穴浓度由5.6×10

-3

增大到6.5×10

-3

p型AlGaInP层的空穴浓度由6.0×10

-3

增大到1.1×10

-3

.但退火温度为780℃时

p型GaP层和p型AlGaInP层的空穴浓度分别下降至8×10

-3

和1.7×10

-3

且Mg原子在AlGaInP系材料中的扩散加剧

导致未掺杂AlGaInP/GaInP多量子阱呈现p型电导.在460～700℃退火范围内

并没有使AlGaInP/GaInP多量子阱的发光性能发生明显变化.但退火温度为780℃时

AlGaInP/GaInP多量子阱的发光强度是退火前的2倍.

Abstract

The AlGaInP/GaInP multiple quantum wells red LED wafers were grown by EMCORE GS/3200 LP-MOCVD.Properties of these wafers were investigated by ECV and photoluminescence measurements.The influences of thermal annealing on the characteristics of AlGaInP/GaInP multiple quantum wells LED wafers were studied. The AlGaInP/GaInP multiple quantum wells LED wafer for thermal annealing experiments consisted of a 0.5 μm n-GaAs buffer layer with carrier concentration of about 5×10

-3

a 0.5 μm n-(Al

0.7

0.3

)

0.5

P cladding layer with carrier concentration of about 3×10

-3

a (Al

0.3

0.7

)

0.5

P/Ga

0.5

P MQW active region

a 0.5 μm p-(Al

0.7

0.3

)

0.5

P cladding layer with carrier concentration of about 6×10

-3

and a 4.8 μm p-GaP current spreading layer with carrier concentration of about 5×10

-3

.The wafer was split into six pieces.These six pieces were annealed under different temperatures within 460～780℃ respectively for 15 min in nitrogen.Compared with as grown samples

the hole carrier concentration of GaP layer in LED wafer increased from 5.6×10

-3

to 6.5×10

-3

and the hole carrier concentration of AlGaInP layer increased from 6.0×10

-3

to 1.1×10

-3

when wafer was annealed under 460℃ for 15 min in nitrogen.The hole carrier concentration of GaP and AlGaInP layers did not obviously change when the annealed temperature was increased to 700℃.However

the hole carrier concentration of GaP layer and AlGaInP layer decreased to 8×10

-3

and 1.7×10

-3

when wafer was annealed under 780℃ for 15 min.And the diffusibility of Mg atoms was enhanced and the undoped AlGaInP/GaInP MQW was p type conductance when the annealing temperature increased to 780℃.The peak wavelength and FWHM did not obviously change when the annealing temperature was lower than 780℃.However

the PL peak intensity from MQW was about 2 times stronger than that of as grown sample when wafer was annealed under 780℃ for 15 min.

关键词

Keywords

references

Views

119

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Structural and Optical Properties of Highly Aligned ZnS Nanorods

Photoelectric Performance of AlGaInP-based Flip-chip Micro-LEDs with Honeycomb Surface Texture

One-step in-situ Synthesis of Cs₂NaInCl₆@PVDF Films: Doping Regulation and Optical Properties

An Organic-inorganic Manganese Halide to Improve LED Light Output Stability and Its Brightness Optimization

Synergistic Regulation of Luminescent and Ferroelectric Properties of Er³⁺-doped AlScN Films

Related Author

冯秋菊

申德振

张吉英

梁红伟

吕有明

范希武

XIE Jun

ZHANG Wei

Related Institution

Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun 130033, China

Graduate School of the Chinese Academy of Sciences

Department of Physics, Dalian University of Technology

Engineering Research Center for Optoelectronics of Guangdong Province， School of Physics and Optoelectronics， South China University of Technology

BOE HC SEMITEK Co.， Yiwu

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰