Photoluminescence of F-passivated ZnO Nanocrystalline Films from Thermally Oxidized ZnF2 Films

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Photoluminescence of F-passivated ZnO Nanocrystalline Films from Thermally Oxidized ZnF₂ Films

更新时间：2020-08-11

- Photoluminescence of F-passivated ZnO Nanocrystalline Films from Thermally Oxidized ZnF₂ Films
- Chinese Journal of Luminescence Vol. 25, Issue 5, Pages: 519-523(2004)
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,吉林长春,130033
  2. 东北师范大学先进光电子功能材料研究中心,吉林长春,130024
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3;O482.31
- Received：20 July 2003，
  
  Revised：08 May 2004，
  
  Published：20 September 2004
- 稿件说明：
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马剑钢, 刘益春, 徐海阳, 骆英民, 张吉英, 吕有明, 申德振, 范希武. 氟掺杂的氧化锌薄膜的结构和光学特性[J]. 发光学报, 2004,(5): 519-523

MA Jian-gang, LIU Yi-chun, XU Hai-yang, LUO Ying-min, ZHANG Ji-ying, LÜ You-ming, SHEN De-zhen, FAN X W. Photoluminescence of F-passivated ZnO Nanocrystalline Films from Thermally Oxidized ZnF2 Films[J]. Chinese Journal of Luminescence, 2004,(5): 519-523
马剑钢, 刘益春, 徐海阳, 骆英民, 张吉英, 吕有明, 申德振, 范希武. 氟掺杂的氧化锌薄膜的结构和光学特性[J]. 发光学报, 2004,(5): 519-523 DOI：

MA Jian-gang, LIU Yi-chun, XU Hai-yang, LUO Ying-min, ZHANG Ji-ying, LÜ You-ming, SHEN De-zhen, FAN X W. Photoluminescence of F-passivated ZnO Nanocrystalline Films from Thermally Oxidized ZnF2 Films[J]. Chinese Journal of Luminescence, 2004,(5): 519-523 DOI：

摘要

通过热氧化氟化锌(ZnF

)薄膜的方法制备出氟掺杂的多晶ZnO薄膜

ZnF

薄膜是利用电子束蒸发方法沉积在Si(100)衬底得到的.利用X射线衍射和X射线电子能谱研究了ZnF

薄膜向ZnO的转变过程.实验结果表明

在400℃退火30min的条件下能够获得六方纤锌矿结构的ZnO:F薄膜.对ZnO:F薄膜的室温光致发光谱可以观察到位于379nm、半峰全宽为73meV的紫外发射峰

而相应于缺陷的深能级发射则完全猝灭.表明ZnO中残留的F能够有效地增强激子的发光

同时使缺陷发光强度明显降低.对F掺杂对ZnO的发光性能的影响进行了讨论.

Abstract

F-passivated ZnO nanocrystalline films were prepared from thermal oxidation of ZnF

films.The ZnF

films were deposited on a Si wafer by electron beam evaporation technique.X-ray diffraction and X-ray photoelectron spectroscopy were used to study the structural changes of ZnF

as a function of oxidation temperatures.When the ZnF

film was oxidized at 400℃ for 30 min

a polycrystalline hexagonal wurtzite structure of ZnO:F was obtained.The room-temperature photoluminescence spectrum of the ZnO:F film showed a strong near band edge ultraviolet emission located at 379 nm with a narrow linewidth of 73 meV and a very weak visible emission associated with deep level defects.The results indicated that the presence of residual F ions in ZnO film can dramatically decrease the visible emission and increase the ultraviolet emission of ZnO.

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