Oxidizing porous silicon in proper condition is a good approach to improve PS photoluminescence intensity.The article for the first time raised a new anodic oxidized technology of PS.We used electrolyte containing CH

3

CSNH

2

to oxidize initial PS

and found that this method can improve the quality of photoluminescence

it can not only enhance the PL intensity greatly

but also increase the photoluminescence stability.Then we studied the oxidizing conditions(current

time

temperature etc.)which affect photoluminescence intensity and stability of PS and gave reasonable explanations.The small oxidizing current can repair the nanostructure of PS

the appropriate oxidizing time can limit the probability of nonradiative recombination

while the optimum oxidizing temperature is propitious to the transit of charge which can make the concentration of electrolyte balanceable

hence

the photoluminescence of oxidized PS is improved evidently.We discovered that the anodic oxidized technology of PS made the integral intensity of photoluminescence enhanced 18 times when in the optimum oxidized conditions of (1 mA

10 min

60℃).