FENG Qiu-ju, SHEN De-zhen, ZHANG Ji-ying, SHAN Chong-xin, ZHANG Zhen-zhong, L&#220; You-ming, LIU Yi-chun, FAN X W. Structural and Optical Properties of Zn<sub>1-x</sub>Cd<sub>x</sub>S Alloys[J]. Chinese Journal of Luminescence, 2004,(5): 515-518
FENG Qiu-ju, SHEN De-zhen, ZHANG Ji-ying, SHAN Chong-xin, ZHANG Zhen-zhong, L&#220; You-ming, LIU Yi-chun, FAN X W. Structural and Optical Properties of Zn<sub>1-x</sub>Cd<sub>x</sub>S Alloys[J]. Chinese Journal of Luminescence, 2004,(5): 515-518DOI:
Structural and Optical Properties of Zn1-xCdxS Alloys
Both CdS and ZnS crystals are Ⅱ-Ⅵ semiconductors and photonic materials having the direct band gaps.Since the wavelength corresponding to the band-gap of CdS is green 500 nm that is very sensitive for human eyes
the CdS thin film is useful for the sensor and the light source.For the CdS thin film produced by pulsed laser deposition (PLD)
we first demonstrated the laser oscillation at room temperature excited with He-Cd laser.On the other hand
ZnS has been used for the fluorescence materials with the various doped elements.The band-gap of ZnS is so large (3.6 eV) that has been applied for the quantum well
the blue LED and the optical waveguide.Zn
1-x
Cd
x
S alloy thin films were prepared on quartz substrate by low-pressure metalorganic chemical vapor deposition (MOCVD).The x values of Zn
1-x
Cd
x
S are 0
0.02
0.44
0.59
0.83
0.91 and 1.X-ray diffraction (XRD) spectra indicate that all the as-grown alloys with hexagonal wurzite structure was obtained.As the Cd content increases
the luminescence peaks of the samples redshift from 3.66 eV to 2.43 eV in the photoluminescence (PL) spectra.Based on the PL peak position of the alloy with different Cd composition
the relation of Zn
1-x
Cd
x
S emission peak with x was obtained as E
g
(Zn
1-x
Cd
x
S)=3.61-1.56x+0.38x
2
.The dependence of the PL peak position and the full width at half maximum(FWHM) of the diffraction peak and PL peak on Cd composition were also discussed.It is found that when x increases from 0 to 1
the PL peak position changes from 3.66 eV to 2.43 eV;but the FWHM increases and reaches a maximum when x=0.83
Photoluminescence and Formation of ZnO Thin Films on n-InP(100) by Electrodeposition
Photoluminescence of Fe-doped ZnO Nanofilms
Effect of the InxGa1-xAs Buffer Layer Compositions on Crystalline Quality and Surface Morphology of In0.82Ga0.18As Grown by Low Pressure MOCVD
Ga2O3 Thin Films Grown on Sapphire by Atmospheric Pressure MOCVD
ZnO Thin Films Grown on GaN/Al2O3 Templates by Atmospheric Pressure MOCVD
Related Author
WENG Zhan-kun
LIU Ai-min
LIU Yan-hong
HU Zeng-quan
李金华
张吉英
赵东旭
张振中
Related Institution
College of Life Science and Technology, Changchun University of Science and Technology
State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, School of Physics and Optoelectronic Technology, Dalian University of Technology
School of Science, Changchun University of Science and Technology
Key Laboratory of Excited State Processes, Chinese Academy of Sciences
Graduate School of the Chinese Academy of Sciences