Growth and Characterization of ZnO Films Grown by Atmospheric MOCVD

WANG Li; MO Chun-lan; XIONG Chuan-bing; PU Yong; CHEN Yu-feng; PENG Shao-qin; JIANG Feng-yi

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Growth and Characterization of ZnO Films Grown by Atmospheric MOCVD

更新时间：2020-08-11

- Growth and Characterization of ZnO Films Grown by Atmospheric MOCVD
- Chinese Journal of Luminescence Vol. 25, Issue 4, Pages: 393-395(2004)
- 作者机构：
  
  南昌大学材料科学研究所,江西南昌,330047
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3
- Received：17 March 2003，
  
  Revised：18 September 2003，
  
  Published：20 July 2004
- 稿件说明：
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王立, 莫春兰, 熊传兵, 蒲勇, 陈玉凤, 彭绍琴, 江风益. 常压MOCVD生长ZnO薄膜及其性质[J]. 发光学报, 2004,25(4): 393-395

WANG Li, MO Chun-lan, XIONG Chuan-bing, PU Yong, CHEN Yu-feng, PENG Shao-qin, JIANG Feng-yi. Growth and Characterization of ZnO Films Grown by Atmospheric MOCVD[J]. Chinese Journal of Luminescence, 2004,25(4): 393-395
王立, 莫春兰, 熊传兵, 蒲勇, 陈玉凤, 彭绍琴, 江风益. 常压MOCVD生长ZnO薄膜及其性质[J]. 发光学报, 2004,25(4): 393-395 DOI：

WANG Li, MO Chun-lan, XIONG Chuan-bing, PU Yong, CHEN Yu-feng, PENG Shao-qin, JIANG Feng-yi. Growth and Characterization of ZnO Films Grown by Atmospheric MOCVD[J]. Chinese Journal of Luminescence, 2004,25(4): 393-395 DOI：

摘要

用常压MOCVD在蓝宝石(0001)面上生长了氧化锌(ZnO)薄膜。用AFM、室温PL谱、Hall测量、X射线双晶衍射、卢瑟福背散射/沟道技术等分析方法研究了样品的表面形貌、结构性能、发光性能和电学性能。AFM分析结果显示

薄膜呈六角柱状结晶

表面平整

粗糙度(RMS)为6.257nm

平均晶粒直径达1.895μm。室温PL测量该样品在380nm处有很强的近带边发射

半峰全宽为15nm。使用Hall测量检查了薄膜的电学性质。室温下该样品的载流子浓度为2×10

-3

迁移率为75cm

·V

-1

·s

-1

。用X射线双晶衍射和卢瑟福背散射/沟道效应研究了薄膜的结晶质量

样品的双晶衍射ω扫描半峰全宽为0.04

沟道效应的最小产额比

min

为3.1%。

Abstract

ZnO films were grown on sapphire substrate(0001) plane by atmospheric MOCVD.Surface mor-phology

crystalline quality

PL and electrical properties of the films were studied using AFM

DXRD

RBS/C

photolumi-nescence and Hall measurements.A columnar structure with an average column size of 1.89μm in diameter and a RMS of 6.257nm of the sample was observed by AFM measurement.The sample shows strong near-band edge emission at 380nm in PL spectra at room temperature

FWHM of the peak is 15nm

no deep level emission was observed.The electrical properties of the samples were measured by Hall measurements at room temperature.The carrier concentration and mobility are 2×10

-3

and 75cm

·V

-1

·s

-1

respectively.Double-crystal X-ray diffraction and Rutherford backscattering/channel(RBS/C)analysis were used to check the crystalline quality of the film

FWHM of the DXRD rocking curve(omega-scan) is 0.04

and the RBS/C minimum yield

min

of the film is 3.1%.Both these results indicate that the ZnO film has a good crystalline quality.

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Related Author

DAI Jiang-nan

WANG Li

FANG Wen-qing

PU Yong

MO Chun-lan

XIONG Chuan-bing

ZHENG Chang-da

LIU Wei-hua

Related Institution

Education Ministry Engineering Research Center for Luminescence Material and Device Nanchang University Nanchang China

Institute of opto-elctronic materials and technology, South China Normal Universitym

College of Materials Science and Engineering, Shenzhen University

Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

Education Ministry Engineering Research Center for Luminescence Material and Device, Nanchang University

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