Over the past few years

wide and direct band gap semiconductors have been intensively studied for their application as blue and ultraviolet light emitters. As a wide gap semiconductor

ZnO has a wide band gap (3.37 eV) and a large binding energy (60 meV). Therefore

ZnO is considered as one of the most promising candidates for short wavelength optoelectronics devices

and it is very important to conduct further studies of the properties of ZnO thin films. In this paper

indium-doped zinc oxides was prepared by radio frequency (rf) reactive co-sputtering on silicon (100) substrate at 430℃. Sputtering target were consist of metal zinc (99.99%) and metal indium (99%). Indium content is about 3% (the ratio of indium slices area to that of whole target) on the target. The sputtering gas is a mixture gas of argon (99.97%) and oxygen (99.95%)

the partial pressure ratio of oxygen is 0.4. The structure

surfaces morphology

type of conductivity

electrical resistivity and PL spectra of the sample were characterized by X-ray diffractometer

scanning electron microscopy

hot probe

four-point probe and fluorescent spectrophotometer

respectively. There are four main ZnO diffraction peaks in the glancing angle X-ray diffraction patterns

and no diffraction peaks of In

2

O

3

or Zn

2

In

2

O

5

are observed. Therefore

we think that polycrystalline ZnO thin films was prepared by RF reactive co-sputtering. The θ-2θ scan mode X-ray diffraction patterns indicated that the film has highly c-axis orientation and low biaxial compressive stress (0.74 GPa). The 2θ angles of (002) diffraction peak is 34.48° and the full width at half maximum is 0.376°. The surface of the sample was smooth and flat. Compared with un-doped ZnO thin films

low resistivity (1.6 Ω·cm) n-type ZnO thin film was deposited on silicon (100) by doped indium. The blue-violet photoluminescence bi-peak located at 415 nm and at 433 nm is observed when exited with 340 nm wavelength in the photoluminescence (PL) spectrum at room temperature. In this paper

we think that the peak at 415 nm comes from In impurity defects and the peak at 433 nm originates from Zn interstitial defects.