Luminescence Characteristic of MgZnO Films and Multiquantum Wells and Superlattices

ZHANG De-heng; ZHANG Xi-jian; WANG Qing-pu; SUN Zheng

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Luminescence Characteristic of MgZnO Films and Multiquantum Wells and Superlattices

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- Luminescence Characteristic of MgZnO Films and Multiquantum Wells and Superlattices
- Chinese Journal of Luminescence Vol. 25, Issue 2, Pages: 111-116(2004)
- 作者机构：
  
  山东大学, 物理与微电子学院, 山东, 济南, 250100
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3
- Received：17 March 2003，
  
  Revised：2003-5-7，
  
  Published：20 March 2004
- 稿件说明：
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张德恒, 张锡健, 王卿璞, 孙征. MgZnO薄膜及其量子阱和超晶格的发光特性[J]. 发光学报, 2004,25(2): 111-116

ZHANG De-heng, ZHANG Xi-jian, WANG Qing-pu, SUN Zheng. Luminescence Characteristic of MgZnO Films and Multiquantum Wells and Superlattices[J]. Chinese Journal of Luminescence, 2004,25(2): 111-116
张德恒, 张锡健, 王卿璞, 孙征. MgZnO薄膜及其量子阱和超晶格的发光特性[J]. 发光学报, 2004,25(2): 111-116 DOI：

ZHANG De-heng, ZHANG Xi-jian, WANG Qing-pu, SUN Zheng. Luminescence Characteristic of MgZnO Films and Multiquantum Wells and Superlattices[J]. Chinese Journal of Luminescence, 2004,25(2): 111-116 DOI：

摘要

MgO和ZnO形成合金Mg

1-x

O的带隙可以在3.3～7.9eV之间变化

在制备紫外波段光电器件方面有着广阔的应用前景.由ZnO和MgZnO交替沉积而成的ZnO/Mg

1-x

O量子阱和超晶格在激光器、光探测器和其他光电器件方面也有潜在的应用价值.回顾最近几年对MgZnO薄膜材料发光特性的研究进展

介绍在不同衬底上用不同方法制备MgZnO合金薄膜的制备技术、发光特性以及发光特性与薄膜中Mg含量的关系;综述近年来在ZnO/Mg

1-x

O超晶格、量子阱研究上的成果

特别介绍了ZnO/Mg

1-x

O对超晶格、量子阱的发光特性、发光机理以及发光特性与势垒层镁含量、器件温度的关系.

Abstract

The band gap of the MgZnO alloy composed of MgO and ZnO can be changed in the range from 3.3～7.9 eV.This material has potential applications in short wavelength opto-electronic devices.ZnO/Mg

1-x

O quantum wells and superlattices can be used in the semiconductor lasers

photodetectors and other opto-electronic devises.In the present paper the developments of the investigation on luminescence characteristic for MgZnO thin films are reviewed.The preparation techniques

luminescence characteristic and corresponding physical mechanisms for the MgZnO alloys are introduced.The ZnO/MgZnO superlattices and quantum wells fabricated on different substrates are described.The Mg content and temperature dependence of the luminescence characteristic are discussed.

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