Effect of p-doping Density and Al Composition upon Luminescent Efficiency

CHEN Gui-chu; FAN Guang-han; CHEN Lian-hui; LIU Lu

doi:null

您当前的位置：

首页 >

文章列表页 >

Effect of p-doping Density and Al Composition upon Luminescent Efficiency

更新时间：2020-08-11

- Effect of p-doping Density and Al Composition upon Luminescent Efficiency
- Chinese Journal of Luminescence Vol. 25, Issue 4, Pages: 379-382(2004)
- 作者机构：
  
  华南师范大学光电子材料与技术研究所, 广东, 广州, 510631
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN209
- Received：19 May 2003，
  
  Revised：2003-9-28，
  
  Published：20 July 2004
- 稿件说明：
移动端阅览
陈贵楚, 范广涵, 陈练辉, 刘鲁. 掺杂与Al组分对AlGaInP四元系LED发光效率的影响[J]. 发光学报, 2004,25(4): 379-382

CHEN Gui-chu, FAN Guang-han, CHEN Lian-hui, LIU Lu. Effect of p-doping Density and Al Composition upon Luminescent Efficiency[J]. Chinese Journal of Luminescence, 2004,25(4): 379-382
陈贵楚, 范广涵, 陈练辉, 刘鲁. 掺杂与Al组分对AlGaInP四元系LED发光效率的影响[J]. 发光学报, 2004,25(4): 379-382 DOI：

CHEN Gui-chu, FAN Guang-han, CHEN Lian-hui, LIU Lu. Effect of p-doping Density and Al Composition upon Luminescent Efficiency[J]. Chinese Journal of Luminescence, 2004,25(4): 379-382 DOI：

摘要

在AlGaInP四元系双异质结发光二极管(DH-LED)的材料生长过程中

限制层的Al组分与p型掺杂浓度的确定有较大的随意性

这对LED的发光不利。通过分析载流子在发光二极管(LED)双异质结中的输运情况

得到了在不同的p型掺杂程度下

限制层Al组分与LED发光效率的关系

从而可以探索p型掺杂与Al组分对发光效率影响的规律

得到的结论对于LED的器件结构设计以及MOCVD材料生长有一定的指导意义。

Abstract

In the case of no determination of Al composition and p-doping density in MOCVD epitaxy of AlGaInP double heterostructure light emitting diodes

the relation of Al composition and luminescent efficiency is gotten under various p-doping density by analyzing carrier transportion in double heterojunction of LED

and the principle of doping density and Al composition vs.luminescent efficiency can be derived.So this conclusion would have a guide to device design and MOCVD epitaxy.

关键词

Keywords

references

Views

154

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Photoelectric Performance of AlGaInP-based Flip-chip Micro-LEDs with Honeycomb Surface Texture

Effect of Al Composition of Electron Blocking Layer on Photoelectric Performance of GaN-based Blue Laser Diode

Effect of Doped-shell on The Luminescent Enhancement of NaYF₄:Ce³⁺,Tb³⁺ System

Thermal Analysis of AlGaInP-LED Mircro-cells

Influence of Al Composition on Electrical and Structural Properties of Al_xGa_1-xN/AlN/GaN HEMT Materials Grown by MOCVD

Related Author

WANG Hong

XU Shenghai

XIE Zijing

ZHANG Wei

XIE Jun

Jing LIU

Xiao-juan DU

Hai-liang DONG

Related Institution

Zhongshan Institute of Modern Industrial Technology， South China University of Technology

BOE HC SEMITEK Co.， Yiwu

Engineering Research Center for Optoelectronics of Guangdong Province， School of Physics and Optoelectronics， South China University of Technology

School of Materials Science and Engineering, Taiyuan University of Technology

Aerospace Science and Technology Defense Technology Research and Experimental Center

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰