N-doped ZnO thin films are grown by plasma-assisted molecular beam epitaxy(P-MBE) on c-plane sapphire(α-Al

2

O

3

) using NO as oxygen source and nitrogen dopant.The gas sources were activated by an oxford Applied Research r.f.(13.56 MHz) plasma source with power of 300 W

A Knudsen effusion cell is used to evaporate elemental zinc with 99.9999% purity.During growth

Zn beam pressure was fixed at 4×10

-4

Pa in the growth chamber and growth temperature kept at 300℃.The crystalline quality of ZnO films is characterized by X-ray diffraction

XRD results show that ZnO:N thin films have wurtzite(002) preferred orientation and the full width at half maximum(FWHM) of p-type ZnO films is broaden clearly comparing with that of undoped ZnO thin films.Optical properties of ZnO:N thin films were observed by UV absorption spectra.In absorption spectra

the subbandgap formed by N doping in the ZnO band gap.Electrical properties were measured by four-probeVan der Pauw method.Hall effect measurement shows that the grown samples are p-type ZnO with carrier concentration of 1.20×10

19

cm

-3

mobility of 0.0535cm

2

·V

-1

·s

-1

and resistivity of 9.50 Ω·cm.