Surface and Luminescence Property of Porous Silicon Films Annealed in Hydrogen Plasma

CHEN Song-yan; XIE Sheng; HE Guo-rong; LIU Bao-lin; CAI Jia-fa; CHEN Li-rong; HUANG Mei-ch

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Surface and Luminescence Property of Porous Silicon Films Annealed in Hydrogen Plasma

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- Surface and Luminescence Property of Porous Silicon Films Annealed in Hydrogen Plasma
- Chinese Journal of Luminescence Vol. 25, Issue 1, Pages: 77-80(2004)
- 作者机构：
  
  厦门大学, 物理系,福建厦门,361005
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Received：06 January 2003，
  
  Revised：29 May 2003，
  
  Published：20 January 2004
- 稿件说明：
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陈松岩, 谢生, 何国荣, 刘宝林, 蔡加法, 陈丽荣, 黄美纯. 氢等离子体气氛中退火多孔硅的表面和光荧光特性[J]. 发光学报, 2004,25(1): 77-80

CHEN Song-yan, XIE Sheng, HE Guo-rong, LIU Bao-lin, CAI Jia-fa, CHEN Li-rong, HUANG Mei-chun. Surface and Luminescence Property of Porous Silicon Films Annealed in Hydrogen Plasma[J]. Chinese Journal of Luminescence, 2004,25(1): 77-80
陈松岩, 谢生, 何国荣, 刘宝林, 蔡加法, 陈丽荣, 黄美纯. 氢等离子体气氛中退火多孔硅的表面和光荧光特性[J]. 发光学报, 2004,25(1): 77-80 DOI：

CHEN Song-yan, XIE Sheng, HE Guo-rong, LIU Bao-lin, CAI Jia-fa, CHEN Li-rong, HUANG Mei-chun. Surface and Luminescence Property of Porous Silicon Films Annealed in Hydrogen Plasma[J]. Chinese Journal of Luminescence, 2004,25(1): 77-80 DOI：

摘要

用电化学腐蚀法制备了多孔硅(PS)

在氢等离子体气氛中不同温度下对多孔硅样品进行了退火处理

并进行了光致发光(PL)谱和原子力显微镜(AFM)表面形貌的测量.不同退火温度给PS表面形态带来较大变化

也影响了其PL谱特性.在退火的样品中观察到的PL谱高效蓝光和紫光谱带

我们认为主要源于量子限制发光峰和非平衡载流子被带隙中浅杂质能级所俘获而引起的辐射复合所产生的.在420～450℃退火处理的多孔硅的PL谱上观察到了一个未见诸于报道的紫光新谱带(3.2eV

382 nm)

其发光机理有待于进一步研究.

Abstract

Porous silicon (PS) was prepared by common electrochemical etching in HF-based electrolytes

and then annealed in plasma of hydrogen at different temperature(250～420℃)in this article. Atomic Force Microscope (AFM) was employed for imaging surface structure at an atomic level. Afterwards

photoluminescence (PL) measurement was applied. Different annealing temperature leads to great change of surface morphology and photoluminescence spectrum of porous silicon. Besides the band caused by quantum size effect

there also exists the efficient blue and violet band in PL spectra of PS. An asymmetric emission band appeared in PL spectrum of PS annealed at 250℃. It could be separated to three components by curve fitting. If these components can be attributed to the recombination of non-equilibrium carriers via three impurity centers in suboxide layer

the PL spectrum could be (explained). The surface composition of PS

which was subjected to the annealing treatment at 420～450℃

is considered to be SiO

:Si(H

O). In its PL spectrum

a new violet emission band not reported in literature before appeared. Its mechanism is still in study.

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