In recent years

the high power lasers have been widely applied in military

industry

medicine

such as in the strong laser weapon

laser detonator

laser guidance

precise machine processes

light storage

light pumps

laser chemistry

laser medicine and so on. Because of the asymmetry of semiconductor laser output beam

the beam must be shaped by optical system in some cases. The far-field characteristics of laser out put must be understood during designing the optical element and optical coupling.Furthermore

optical-field characteristics of laser cavity can be obtained by correct far-field modal with measure data. In this project

the Helmholtz equation was solved by the cleavage facet boundary condition of quantum-well laser. So the density distribution of far-field and divergence angle of beam were obtained. The theoretical curves and data obtained by computation were ploted also. The curve of the far-field distribution of laser and the measure data by the semiconducter laser all-parameter measurement meter

including the far-field intensity profile and the beam divergence angle. The experimental results are in agreement with the theory. The laser sample used in the experimental measurement is 82

#

laser diode

CW output power as 2.01W

operating current as 10.53A

operating voltage as 1.7V

slope efficiency as 1.01W/A

center wavelength as 801.8nm

spectral width 2 nm

emitting dimensions 150μm×1μm

divergence angle of perpendicular junction plan as 28.8°

divergence angle of parallel junction plane as 7.5°

the experimental measurement performed with a separation distance of 50 mm from the laser cavity surface. The results showed that the theoretical far-field intensity distribution curve is in accordance with the experimental measurement data basically.