ZnO thin films doped with NH

3

have been grown on R-plane sapphire substrate by MOCVD and the growth parameters have been optimized by XRD and SEM method. The only 〈11

2

0〉oriented ZnO thin film has been obtained in 610℃ and 80sccm NH

3

flux

and the FWHM of 〈11

2

0〉 plane X-ray diffraction peak is only 0.50°. At the same time

the samples’SEM images show that the surface of the sample with 80sccm NH

3

is the most smooth

which may be related to the amount of hydrogen atom in the sample. The electronics properties of the samples were determined by Hall method. The results show that the resistivity of the film with 80sccm NH

3

is up to 10

8

Ω·cm

and the film with 50sccm NH

3

shows low p-type. In order to investigate the nitrogen atom form in the samples

X-ray photoelectron spectra of the samples have been studied. The results show that the N1s photoelectron comes from N

3-

for the sample with 50sccm NH

3

. For the sample with 80sccm and 110sccm NH

3

the N1s photoelectron comes from NH

2-

and NH

2

-

respectively. This implies that some hydrogen atoms were introduced into the samples with increase of NH

3

flux. All above indicate that high quality ZnO thin film doped with NH

3

has been obtained on

R

-plane sapphire substrate. Furthermore

some films show not only high resistivity but also low p-type

which is good for the application of ZnO film. 