Raman Investigations of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD

SUN Guo-sheng; LUO Mu-chang; Wang Lei; ZHAO Wan-shun; SUN Yan-ling; ZENG Yi-ping; LI Jin-m

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Raman Investigations of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD

更新时间：2020-08-11

- Raman Investigations of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD
- Chinese Journal of Luminescence Vol. 24, Issue 4, Pages: 421-425(2003)
- 作者机构：
  
  中国科学院半导体研究所, 新材料实验室北京,100083
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304.24
- Received：14 August 2002，
  
  Revised：2002-12-23，
  
  Published：20 July 2003
- 稿件说明：
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孙国胜, 罗木昌, 王雷, 赵万顺, 孙艳玲, 曾一平, 李晋闽, 林兰英. Si(100)和蓝宝石(0001)衬底上3C-SiC的Raman研究[J]. 发光学报, 2003,24(4): 421-425

SUN Guo-sheng, LUO Mu-chang, WANG Lei, ZHAO Wan-shun, SUN Yan-ling, ZENG Yi-ping, LI Jin-min, LIN Lan-ying. Raman Investigations of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD[J]. Chinese Journal of Luminescence, 2003,24(4): 421-425
孙国胜, 罗木昌, 王雷, 赵万顺, 孙艳玲, 曾一平, 李晋闽, 林兰英. Si(100)和蓝宝石(0001)衬底上3C-SiC的Raman研究[J]. 发光学报, 2003,24(4): 421-425 DOI：

SUN Guo-sheng, LUO Mu-chang, WANG Lei, ZHAO Wan-shun, SUN Yan-ling, ZENG Yi-ping, LI Jin-min, LIN Lan-ying. Raman Investigations of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD[J]. Chinese Journal of Luminescence, 2003,24(4): 421-425 DOI：

摘要

单晶Si和蓝宝石(0001)是两种重要的3C-SiC异质外延衬底材料

然而

由于Si及蓝宝石和3C-SiC之间大的晶格失配度和热膨胀系数失配度

在3C-SiC中会产生很大的内应力

直接影响3C-SiC的电学特性。Raman散射测试是一个功能很强的测试方法

其强度、宽度、Raman位移等有关Raman参数可以给出有关SiC晶体质量的信息

其中包括内应力。利用背散射几何构置的Raman方法研究了Si(100)和蓝宝石(0001)衬底上LPCVD方法生长的SiC外延薄膜

在生长的所有样品中均观察到了典型的3C-SiC的TO和LO声子峰

在3C-SiC/Si材料中

这两个声子峰分别位于970.3cm

-1

和796.0cm

-1

在3C-SiC/蓝宝石材料中

分别位于965.1cm

-1

和801.2cm

-1

这一结果表明这两种外延材料均为3C-SiC晶型。利用一个3C-SiC自由膜作为无应力标准样品

并根据3C-SiC/Si和3C-SiC/蓝宝石的TO和LO声子峰Raman位移相对于自由膜的移动量

得到3C-SiC中的内应力约分别为1GPa和4GPa。实验发现在这两种材料的TO声子峰的Raman位移移动方向相反

通过比较3C-SiC、Si和蓝宝石的热膨胀系数

预期Si衬底上的3C-SiC外延膜受到的应力为张应力

而蓝宝石衬底上3C-SiC受到的应力则为压应力。

Abstract

The Raman measurements have been performed with the back-scattering geometry on the SiC films grown on Si (100) and sapphire (0001) by LPCVD. Typical TO and LO phonon peaks of 3C-SiC were observed for all the samples grown on Si and sapphire substrates

indicating the epilayers are 3C-SiC polytype. Using a free-standing 3C-SiC film removed from Si(100) as a free-stress sample

the stresses of 3C-SiC on Si (100) and sapphire (0001) were estimated according to the shift of TO and LO phonons.

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