ZnO is an n-type semiconductor having a hexagonal wurtzite structure. Because its exciton bonding energy is as high as 60meV

ZnO exhibits good piezoelectric

photoelectric and optical properties at room temperature

and might be a good candidate for laser and electroluminescence device. In addition

the melting point of ZnO is high enough to ensure its thermal stability. Since the discovery of the laser of ZnO in ultraviolet light region in 1997

ZnO has become a new hotspot in the research of the ultraviolet light emission material. But for the existence of some native defects in ZnO

generally

ZnO is a n-type semiconductor material. By this time

the research of p type ZnO material still needs more work. According to previous reports

nitrogen is a promising candidate of dopant for the fabrication of p type ZnO

so a lot of researchers make attention of the doping of nitrogen into ZnO. Nitride zinc-oxide thin films were fabricated by rf. sputtering technique

and the concentration of nitrogen in films was changed by a series of annealing process in oxygen ambient in this letter. The annealing temperature is ranged from 300 to 1000℃.After the annealing process

X-ray diffraction spectrum

X-ray photoelectron spectrum

Photoluminescence spectrum and Raman scattering spectrum were used to investigate the change of the crystal structure and the optical properties of the films and the effect of the nitrogen doping was discussed.