Diamond possesses a low or negative electron affinity surface that allows its surface to emit electrons under low electric field

so diamond films have potential applications in the areas such as field emission display. Although a considerable research effort on diamond field emission has been made in the past few years

the influences of crystal texture of diamond films on emission properties are not yet completely understood. In this article

the effect of seed crystal density on the hot film chemical vapor deposition (HFCVD) diamond film's component

crystal texture and field emission property was analyzed. In most cases

the silicon substrate was eroded or rubbed before HFCVD diamond film. In this report

diamond seed crystals were deposited to silicon substrates with different density by controlling the electrophoresis deposition (EPD) time

then synthesized diamond film on the seeded silicon substrates with a HFCVD reactor.The samples were analyzed with scanning electron microscope (SEM) and Raman spectrum

and the field emission properties of those samples were tested. The result shows that the amount of graphite phase with

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2

bond structure at diamond crystal interfaces is a virtual factor for its electron emission abi lity. A little of the graphite phase is good for the electron transmission in the film

however the amount should not be too much. The high density and small size of the diamond powder on the film surface are helpful to exert the electron emission property. Also the interface resistance of diamond and silicon substrate should be low

ensure the electron inject to diamond film from silicon substrate easily. For the diamond films chemistry vapor deposited on the silicon substrates seeded with diamond powders by EPD process

the area rate of amorphous carbon component and the graphite phase component in the Raman spectrum should be around 1:0.31

which corresponds a better field emission property.