Luminescent materials based on Zn

2

SiO

4

:Mn are used as the green component of projection television and ppc copy machines due to its high luminesc ence efficiency. The sol-gel technology

characterized by simple procedures and facilities

is very suitable for deposition of thin amorphous and crystalline films

which have found applications in many fields. Future integrated circuits will require reliable technique for fabricating nanometer-scale devices. Optical lithography or photolithography

which has been and will be the mainstay of lithography for the near future

is expected to be limited to 100nm resolution. In this paper

Mn

2+

-doped Zn

2

SiO

4

phosphor films and their patterning were fab ricated on silicon and quartz glass substrates by sol-gel process (dip-coating) combined with a soft lithography. The resulted film samples were characterized by X-ray diffraction (XRD)

atomic force microscope (AFM)

optical microscope and photolumines cence excitation and emission spectra. The results of XRD reveal that these film sremain amorphous below 700℃

begin to crystallize at 800℃ and crystallize completely around 1000℃. The grain structure of the film can be seen clearly fro m AFM micrographs

where particles with average size of 220nm can be resolved. the films show a strong green emission with a maximum at 522nm and corresponding excitation band was ranging from 220 to 280nm with a maximum at 248nm. Four kinds of patterning structures with film line widths of 5

10

20 and 50m have been obtained by micromolding in capillaries soft lithography technique. The optical microscopy micrographs show that the film bands had a 10%～20% shrinkage after firing.