Improved Efficiency of Organic Light-emitting Diodes by Doping Each Other between the Organic Layer

HOU Jing-ying; GAO Wen-bao; SUN Jia-xin; ZHAO Yi; LIU Shi-yong

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Improved Efficiency of Organic Light-emitting Diodes by Doping Each Other between the Organic Layer

更新时间：2020-08-11

- Improved Efficiency of Organic Light-emitting Diodes by Doping Each Other between the Organic Layer
- Chinese Journal of Luminescence Vol. 24, Issue 2, Pages: 157-160(2003)
- 作者机构：
  
  吉林大学, 电子科学与工程学院, 吉林, 长春, 130023
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN383.1
- Received：02 September 2002，
  
  Revised：22 November 2002，
  
  Published：20 March 2003
- 稿件说明：
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侯晶莹, 高文宝, 孙家鑫, 赵毅, 刘式墉. 利用有机层间互相掺杂提高有机电致发光器件的效率[J]. 发光学报, 2003,24(2): 157-160

HOU Jing-ying, GAO Wen-bao, SUN Jia-xin, ZHAO Yi, LIU Shi-yong. Improved Efficiency of Organic Light-emitting Diodes by Doping Each Other between the Organic Layer[J]. Chinese Journal of Luminescence, 2003,24(2): 157-160
侯晶莹, 高文宝, 孙家鑫, 赵毅, 刘式墉. 利用有机层间互相掺杂提高有机电致发光器件的效率[J]. 发光学报, 2003,24(2): 157-160 DOI：

HOU Jing-ying, GAO Wen-bao, SUN Jia-xin, ZHAO Yi, LIU Shi-yong. Improved Efficiency of Organic Light-emitting Diodes by Doping Each Other between the Organic Layer[J]. Chinese Journal of Luminescence, 2003,24(2): 157-160 DOI：

摘要

提高器件的发光效率是实现有机电致发光器件实用化的一个关键因素。通过对器件结构和制作工艺的优化设计

将有机电致发光器件的各个功能层进行互相掺杂

在层间形成互掺过渡层达到平衡载流子的注入

使得注入的电子和空穴有效地限制在互掺的有源区内

增加了载流子相遇复合的几率

进而提高器件的发光效率。器件的最大电流效率在外加电压10.5V时达到7.9cd/A

最大发光亮度在35V时达到49000cd/m

。和一般掺杂器件相比效率提高2倍以上。同时有机层间的互相掺杂也在一定程度上消除了层间的界面

减少了有机层间的缺陷

与没有过渡层的器件相比

器件老化性能有了明显改善。

Abstract

That is a key factor to improve the efficiency for realizing the application of organic light-emitting diodes (OLEDs). The function layers were doped witheach other to form transition layer in order to balance the carriers injected. Meanwhile

the electrons and holes injected are effectively confined in the active layer

which leads to the increase of carriers encounter. Thus the EL efficiency was elevated. The device exhibited the maximum emission of 49300cd/m

at the driving voltage of 35V. The maximum efficiency is 7.96cd/A at 10.5V

which was improved by twice in comparison with the conventional doped devices. Meanwhile

the device exhibited superior operational stability with a half-life time of 1000h at a constant current density of 26.7mA/cm

with the starting luminance of 1000cd/m

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