Quantum confinement is an important phenomenon that is being extensively used in making optoelectronic devices with superior properties. In particular

single and multiple quantum wells compose of AlGaAs/GaAs are being widely used

such as high electronic mobility transistors (HEMT) and lasers. With the development of crystal growth technology

MBE has been effectively used in growing such multilayered structures of desirable optical quality. The experimental methods including photoluminescence (PL)

Raman resonance scattering

Hall effect

electrochemical

C-V

profiling

transmitting electromicroscopy and X-ray diffraction were used for study the structure characteristic and photoelectic properties of the materials. X-ray double crystal diffraction and photoluminescence techniques belong to the most sensitive

nondestructive methods of analyzing semiconductor properties. In this paper

we report on structure design and material characteristics of high power InGaAs/AlGaAs/GaAs fold cavity surface emitting laser (FCSEL) with 45° intracavity micro mirror. The epitaxial material for these devices was grown by molecular beam epitaxy (MBE) technique. Optical and structural characteristics of the film were studied by photoluminescence (PL)

X-ray double crystal diffraction and electrochemical

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profiling method. The radiation wave length 0.921μm of sample was obtained at low temperature (10K) in PL spectrum. The experimental results of X-ray double crystal rocking curve and low temperature (10K) PL show the designed structure of folded cavity surface emitting lasers was realized by MBE. The results also show that measuring methods of PL and X-ray double crystal diffraction are very important for testing the quality of quantum wells and improving the MBE technology.