YAN Li, CHEN Xiao-yang, HE Shi-tang, LI Hong-lang, HAN Pei-de, CHEN Zhen, LU Da-cheng, LIU Xiang-lin, WANG Xiao-hui, LI Yu-feng, YUAN Hai-rong, LU Yuan, LI Da-bing, ZHU Qin-sheng, WANG Zhan-guo. Study of the Surface Acoustic Wave Properties of GaN[J]. Chinese Journal of Luminescence, 2003,24(2): 161-164
YAN Li, CHEN Xiao-yang, HE Shi-tang, LI Hong-lang, HAN Pei-de, CHEN Zhen, LU Da-cheng, LIU Xiang-lin, WANG Xiao-hui, LI Yu-feng, YUAN Hai-rong, LU Yuan, LI Da-bing, ZHU Qin-sheng, WANG Zhan-guo. Study of the Surface Acoustic Wave Properties of GaN[J]. Chinese Journal of Luminescence, 2003,24(2): 161-164DOI:
Study of the Surface Acoustic Wave Properties of GaN
High quality and high resistivity (0001) GaN film was grown on (0001) plane sapp hire by metalorganic vapor phase epitaxy (MOVPE). To measure the surface a coustic wave (SAW) properties accurately
metallized interdigital transducers (IDT) we re deposited on the GaN surface. The pitch of the IDT was 15μm (=λ/4
λ:S AW w avelength)
and the number of IDT finger pairs was 40. The surface acoustic wave velocity on free surface and that on metal surface were measured by pulse metho d respectively
and then the electromechanical coupling coefficient was calculat ed. The surface acoustic wave velocity (