Silicon was a main material of micro-electronic devices.It was possessed of better advantage than other semiconductor materials.But semiconductor silicon was not regarded as one of candidates in optoelectronic materials because of its indirect bandgap and lower light efficiency.Thus its application in the luminescence material was restricted.For obtaining strong visible luminescence material

people have done more investigation.Recently the studies on the strong visible light emission at room temperature for the silicon based materials

such as porous Si

amorphous Si

RE-doped Sietc.

have brought about a public extensive attention in the silicon photo electronic integration.Some of rare-earth ions are the better light emitting ions

the method that rare-earth ion was doped into silicon by using ion-implantation was adopted by more and more people.The ion-implanted Si-based emitting materials are investigated for their light emission properties.Now

study of the light emission properties for silicon doped by RE is mainly limited to discussion of those for silicon doped by Er.Very few studies have been reported on luminescence properties for other RE doped silicon

many of them will be investigated in a deep going way.In this paper

rare earth ions Nd

Ce are implanted into monocrystal Si wafer and thermal oxide Si samples at the energy 45keV and with the doses of 1×10

17

5×10

17

and 1×10

18

cm

-2

separately using metal vapor vacuum arc (MEVVA) ion implantation.After rapid annealing treatment to the above implanted samples at 900℃

1000℃ and 1100℃

the photoluminescence (PL) spectra excited by ultraviolet are measured by Hitachi F

3

010 photoluminescence spectrophotometer at room temperature.The results show that all the samples possess blue-violet photoluminescence properties under the ultraviolet light excitation and its light emission is stable.The photoluminescence efficiency for the samples varies with the anneal condition

and the light emission is more intense when the doped impurity concentration is greater within a certain limits.The feature and appearance of the samples was surveyed by use of atomic force microscopy (AFM).The experimental results show that the surface grain size and coarse degree for sample have influence on its light emission efficiency.The light emission efficiency is higher when the surface grain size is symmetrical and average coarse degree is little for samples.Besides

the Rutherford Backscattering Spectrum (RBS) at room temperature for the samples annealed under O

2

at different temperature was measured.The photoluminescence mechanism for our sample is also discussed.