Effect of Annealing Temperature on the Optical Properties of a-Se0.70 Ge0.15 Sb0.15 Thin Films

Farag E M; Ammar A H; Soliman H S

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Effect of Annealing Temperature on the Optical Properties of a-Se_0.70 Ge_0.15 Sb_0.15 Thin Films

更新时间：2020-08-11

- Effect of Annealing Temperature on the Optical Properties of a-Se_0.70 Ge_0.15 Sb_0.15 Thin Films
- Chinese Journal of Luminescence Vol. 23, Issue 2, Pages: 137-144(2002)
- 作者机构：
  
  1. Basic Science of Engineering, Faculty of Engineering Shebin El-Kom, Minufiya University,Egypt
  2. Department of Physics, FacultyofEducation, AinShamsUniversity, Roxy, Cairo, Egypt
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3
- Received：20 September 2001，
  
  Revised：28 October 2001，
  
  Published：20 March 2002
- 稿件说明：
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Farag E M, Ammar A H, Soliman H S. 退火温度对a-Se0.70 Ge0.15Sb0.15薄膜的结构和光学性质的影响[J]. 发光学报, 2002,23(2): 137-144

Farag E M, Ammar A H, Soliman H S. Effect of Annealing Temperature on the Optical Properties of a-Se0.70 Ge0.15 Sb0.15 Thin Films[J]. Chinese Journal of Luminescence, 2002,23(2): 137-144
Farag E M, Ammar A H, Soliman H S. 退火温度对a-Se0.70 Ge0.15Sb0.15薄膜的结构和光学性质的影响[J]. 发光学报, 2002,23(2): 137-144 DOI：

Farag E M, Ammar A H, Soliman H S. Effect of Annealing Temperature on the Optical Properties of a-Se0.70 Ge0.15 Sb0.15 Thin Films[J]. Chinese Journal of Luminescence, 2002,23(2): 137-144 DOI：

摘要

研究了退火温度对Se

0.70

0.15

薄膜的影响。通过热蒸发技术

在300K温度下将大块无定形Se

0.70

0.15

沉积在石英和玻璃衬底上。研究发现

未经过退火处理的薄膜结构和在300K

1.33×10

-5

Pa下退火1小时后的薄膜结构都是无定形结构

而在同样气压470K温度下退火1小时的薄膜有结晶现象通过在300～2500nm范围内垂直入射光方向上透射率和反射率的测试

研究了薄膜的一些光学参数

如消光系数(k)

折射系数(n)和吸收系数(α)。研究发现

n和k同热处理温度有关。通过光学数据的分析

得到了不同条件下薄膜的间接带隙宽度(E

non

)

未经过热处理薄膜的E

non

是1.715±0.021eV

300K下退火薄膜的E

non

是1.643±0.021eV

470K下退火的E

non

是1.527±0.021eV。退火温度降低了带隙宽度E

non

但增加了带尾E

。这种效应可以根据Mott和Davis提出的多晶体系中态密度来解释。

Abstract

Thin films of amorphous bulk Se

0.70

0.15

system are deposited on a quartz and glass substrates at 300K by the thermal evaporation technique.The amorphous films were annealed at 370 and 470K in vacuum ～10

-4

Pa for 1h.The as-deposited and annealed films were checked by X-ray diffraction.On annealing at 470K(in the same time and vacuum)

the films revealed crystalline nature.The optical constants such as refractive index(

)

absorption coefficient(

)and extinction coefficient(

) were determined from the measured transmittance and reflectance at normal incidence of light in the wavelength range 300～2500nm.It was found that both(

) and (

) depend markedly on the temperature of heat treatment.The analysis of the optical data gave non-direct band gaps(

non

)of 1.715±0.021

1.643±0.021 and 1.572±0.021eV for as-deposited

370K and 470K annealed samples respectively.The annealing temperatures are decreased the band gap(

non

)and increasing the band-tail(

).This effect is interpreted in terms of the density of state model in amorphous solids proposed by Mott and Davis.The Wemple-DiD omenico single oscillator model parameterizes for as-deposited and annealed films are determined.

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