Nitridation of GaAs(001) Using N2-RF Plasma

QIN Zhi-xin; CHEN Zhi-zhong; ZHOU Jian-hui; ZHANG Guo-yi

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Nitridation of GaAs(001) Using N₂-RF Plasma

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- Nitridation of GaAs(001) Using N₂-RF Plasma
- Chinese Journal of Luminescence Vol. 23, Issue 2, Pages: 114-118(2002)
- 作者机构：
  
  北京大学物理系, 介观物理与人工微结构国家重点实验室北京,100871
- 作者简介：
- 基金信息：
  
  Project supported by the National Nature Science Foundation of China(69876002)
- DOI：
  CLC： TN312.8
- Received：17 September 2001，
  
  Revised：2001-10-20，
  
  Published：20 March 2002
- 稿件说明：
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秦志新, 陈志忠, 周建辉, 张国义. 采用N2-RF等离子体氮化GaAs(001)[J]. 发光学报, 2002,23(2): 114-118

QIN Zhi-xin, CHEN Zhi-zhong, ZHOU Jian-hui, ZHANG Guo-yi. Nitridation of GaAs(001) Using N2-RF Plasma[J]. Chinese Journal of Luminescence, 2002,23(2): 114-118
秦志新, 陈志忠, 周建辉, 张国义. 采用N2-RF等离子体氮化GaAs(001)[J]. 发光学报, 2002,23(2): 114-118 DOI：

QIN Zhi-xin, CHEN Zhi-zhong, ZHOU Jian-hui, ZHANG Guo-yi. Nitridation of GaAs(001) Using N2-RF Plasma[J]. Chinese Journal of Luminescence, 2002,23(2): 114-118 DOI：

摘要

研究了在MBE系统中

GaAs(001)表面的氮化过程。GaAs(001)表面直接和间接地暴露在等离子体激发的N

气流下。两种氮化过程显示了完全不同的表面氮化结果。在打开N

发生器挡板的情况下

氮化导致GaAs(001)表面损伤

并且形成多晶结构。当增加N

气压时

损伤变得更严重。但是

在关闭N

发生器挡板的情况下

在500℃下

经过氮化将观察到(3×3)再构的RHEED花样

表面仍保持原子级的平整度。上述结果表明

不开N

发生器挡板

低温(500℃下)氮化将在GaN外延生长之前形成平整的薄层c-GaN。

Abstract

The nitridation process of GaAs(001) surface was performed by exposing the surface of GaAs(001) to the flux of plasma-excited N

gas directly and indirectly in MBE system.Two processes show completely different effect on the GaAs surface.The nitridation performed by opening N

cell shutter resulted in deterioration of the GaAs(001) surface and formation of polycrystalline structure.With increasing of the N

pressure during the nitridation

the deterioration became serious.However

for the surface nitrided with the closed N

cell shutter

after nitridation process at 500℃

the(3×3) RHEED pattern was observed and the surface still kept atomically flat.Our results indicate that the nitridation (without opening N

shutter) of GaAs(001) surface at low temperature (500℃) is suitable for the formation of thin c-GaN layer with flat surface before normal GaN epilayer growth.

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