Nitridation of GaAs(001) Using N2-RF Plasma

QIN Zhi-xin; CHEN Zhi-zhong; ZHOU Jian-hui; ZHANG Guo-yi

doi:null

您当前的位置：

首页 >

文章列表页 >

Nitridation of GaAs(001) Using N₂-RF Plasma

更新时间：2020-08-11

- Nitridation of GaAs(001) Using N₂-RF Plasma
- Chinese Journal of Luminescence Vol. 23, Issue 2, Pages: 114-118(2002)
- 作者机构：
  
  北京大学物理系, 介观物理与人工微结构国家重点实验室北京,100871
- 作者简介：
- 基金信息：
  
  Project supported by the National Nature Science Foundation of China(69876002)
- DOI：
  CLC： TN312.8
- Received：17 September 2001，
  
  Revised：20 October 2001，
  
  Published：20 March 2002
- 稿件说明：
移动端阅览
秦志新, 陈志忠, 周建辉, 张国义. 采用N2-RF等离子体氮化GaAs(001)[J]. 发光学报, 2002,23(2): 114-118

QIN Zhi-xin, CHEN Zhi-zhong, ZHOU Jian-hui, ZHANG Guo-yi. Nitridation of GaAs(001) Using N2-RF Plasma[J]. Chinese Journal of Luminescence, 2002,23(2): 114-118
秦志新, 陈志忠, 周建辉, 张国义. 采用N2-RF等离子体氮化GaAs(001)[J]. 发光学报, 2002,23(2): 114-118 DOI：

QIN Zhi-xin, CHEN Zhi-zhong, ZHOU Jian-hui, ZHANG Guo-yi. Nitridation of GaAs(001) Using N2-RF Plasma[J]. Chinese Journal of Luminescence, 2002,23(2): 114-118 DOI：

摘要

研究了在MBE系统中

GaAs(001)表面的氮化过程。GaAs(001)表面直接和间接地暴露在等离子体激发的N

气流下。两种氮化过程显示了完全不同的表面氮化结果。在打开N

发生器挡板的情况下

氮化导致GaAs(001)表面损伤

并且形成多晶结构。当增加N

气压时

损伤变得更严重。但是

在关闭N

发生器挡板的情况下

在500℃下

经过氮化将观察到(3×3)再构的RHEED花样

表面仍保持原子级的平整度。上述结果表明

不开N

发生器挡板

低温(500℃下)氮化将在GaN外延生长之前形成平整的薄层c-GaN。

Abstract

The nitridation process of GaAs(001) surface was performed by exposing the surface of GaAs(001) to the flux of plasma-excited N

gas directly and indirectly in MBE system.Two processes show completely different effect on the GaAs surface.The nitridation performed by opening N

cell shutter resulted in deterioration of the GaAs(001) surface and formation of polycrystalline structure.With increasing of the N

pressure during the nitridation

the deterioration became serious.However

for the surface nitrided with the closed N

cell shutter

after nitridation process at 500℃

the(3×3) RHEED pattern was observed and the surface still kept atomically flat.Our results indicate that the nitridation (without opening N

shutter) of GaAs(001) surface at low temperature (500℃) is suitable for the formation of thin c-GaN layer with flat surface before normal GaN epilayer growth.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

GaN Grown on Sputtered AlN/Mo/Sc_0.2Al_0.8N Composite Structure with Different Mo Thickness

Effect of Si Doping on Photoluminescence Properties of GaAs Nanowires

Effect of SiO₂ Patterned Sapphire Substrate on GaN Growth and LED Luminescence Performance

Fabrication and Characterization of GaN-based White LED on 4-inch Patterned Sapphire Substrate

Surface and Luminescence Properties of GaAs(100) by Hydrazine Solution Passivation

Related Author

LI Jiahao

HAN Jun

XING Yanhui

DONG Shengyuan

WANG Binghui

REN Jianhua

ZENG Zhongming

ZHANG Baoshun

Related Institution

Suzhou Institute of Nano-Tech and Nano-Bionics， Chinese Academy of Sciences

State Key Laboratory of High Power Semiconductor Lasers， Changchun University of Science and Technology

Key Laboratory of Opto-electronics Technology， Ministry of Education， Faculty of Information Technology， Beijing University of Technology

School of Science, Changchun University of Science and Technology

State Key Laboratory of High-power Semiconductor Laser, Changchun University of Science and Technology

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰