Growth Properties of Doped In0.5(Ga1-xAlx)0.5P Alloys

LI Zhong-hui; DING Xiao-min; YU Tong-jun; YANG Zhi-jian; HU Xiao-dong; ZHANG Guo-yi

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Growth Properties of Doped In_0.5(Ga_1-xAl_x)_0.5P Alloys

更新时间：2020-08-11

- Growth Properties of Doped In_0.5(Ga_1-xAl_x)_0.5P Alloys
- Chinese Journal of Luminescence Vol. 23, Issue 5, Pages: 469-472(2002)
- 作者机构：
  
  1. 北京大学物理学院, 人工微结构与介观物理国家重点实验室, 宽禁带半导体研究中心北京,100871
  2. 长春理工大学,吉林长春,130022
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN305.3
- Received：21 January 2002，
  
  Revised：13 July 2002，
  
  Published：20 September 2002
- 稿件说明：
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李忠辉, 丁晓民, 于彤军, 杨志坚, 胡晓东, 张国义. In0.5(Ga1-xAlx)0.5P合金的掺杂生长特性[J]. 发光学报, 2002,23(5): 469-472

LI Zhong-hui, DING Xiao-min, YU Tong-jun, YANG Zhi-jian, HU Xiao-dong, ZHANG Guo-yi. Growth Properties of Doped In0.5(Ga1-xAlx)0.5P Alloys[J]. Chinese Journal of Luminescence, 2002,23(5): 469-472
李忠辉, 丁晓民, 于彤军, 杨志坚, 胡晓东, 张国义. In0.5(Ga1-xAlx)0.5P合金的掺杂生长特性[J]. 发光学报, 2002,23(5): 469-472 DOI：

LI Zhong-hui, DING Xiao-min, YU Tong-jun, YANG Zhi-jian, HU Xiao-dong, ZHANG Guo-yi. Growth Properties of Doped In0.5(Ga1-xAlx)0.5P Alloys[J]. Chinese Journal of Luminescence, 2002,23(5): 469-472 DOI：

摘要

利用LP-MOCVD分别生长Zn和Si掺杂的In

0.5

(Ga

1-x

)

0.5

P外延层

研究生长温度、掺杂源流量、Ⅴ/Ⅲ比、Al组分以及衬底晶向偏离等生长条件对外延层掺杂浓度的影响。实验结果表明:降低生长温度和Al含量、增加DEZn流量、选择由(10.0)向(111)A偏6～15°的衬底都有利于增加InGaAlP合金中Zn的掺杂浓度;提高生长温度和增加SiH

流量、减小Al含量和Ⅴ/Ⅲ比

都有助于增加Si掺杂浓度

而衬底晶向对Si掺杂浓度无影响。

Abstract

The In

0.5

(Ga

1-x

)

0.5

P quaternary alloys has been an interesting material

because of high recombination probability

high emission efficiency

direct band-gap transition and small lattice-mismatch to GaAs substrate.Thus In

0.5

(Ga

1-x

)

0.5

P alloys was ideal active and cladding layer material for LEDs and LDs operating in the red to green region of the visible spectrum. However

many problems plague the MOCVD growth of In

0.5

(Ga

1-x

)

0.5

including oxygen and carbon contamination

due to the Al

the difficulties increases as the band-gap energy increases. The In

0.5

(Ga

1-x

)

0.5

P materials were grown on the silicon doped GaAs substrate by LP-MOCVD.The metalorganic precursors were trimethylindium(TMIn)

trimethylgallium(TMGa)

trimethyaluminum(TMAl).The hydride source was phosphine(PH

).The dopant source was silane(SiH

) and dimethylzinc(DEZn)

respectively.Al composition in In

0.5

(Ga

1-x

)

0.5

P epilayer was

=0.6. To investigate the effect of the growth conditions such as temperature

dopant flow rate

Ⅴ/Ⅲ ratio

Al composion and substrate orientations on doped concentration

the growth of doped InGaAlP alloys was studied by LP-MOCVD.We demonstrated that lowering temperature and reducing Al composion

increasing the flow rate of DEZn

and selecting the substrate inclining 6 to 15° from

100

111

are contribute to the increasing of Zn-doped concentration in InGaAlP alloys. While raising temperature and increasing the flow rate of SiH

reducing Al composion and Ⅴ/Ⅲ ratio are contribute to Si doped concentration

and the orientations of substrate has no effect on the latter.

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