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Comparison of Properties of Metal-semiconductor-metal GaN Ultraviolet Photodetectors Operated at 94K Low Temperature and at Room Temperature
更新时间：2020-08-11

    • Comparison of Properties of Metal-semiconductor-metal GaN Ultraviolet Photodetectors Operated at 94K Low Temperature and at Room Temperature

    • Chinese Journal of Luminescence   Vol. 23, Issue 5, Pages: 461-464(2002)
    • CLC： TN364

    • Received：10 April 2002，

      Revised：25 July 2002，

      Published：20 September 2002

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  • BAO Chun-yu, LI Zi-lan, CHEN Zhi-zhong, QIN Zhi-xin, HU Xiao-dong, TONG Yu-zhen, DING Xiao-min, YANG Zhi-jian, ZHANG Guo-yi. Comparison of Properties of Metal-semiconductor-metal GaN Ultraviolet Photodetectors Operated at 94K Low Temperature and at Room Temperature[J]. Chinese Journal of Luminescence, 2002,23(5): 461-464 DOI：

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