Thermoluminescence of GdVO4：Eu3+

LIU Bo; SHI Chao-shu; ZHANG Qing-li; GUO Chang-xin

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Thermoluminescence of GdVO₄：Eu³⁺

更新时间：2020-08-11

- Thermoluminescence of GdVO₄：Eu³⁺
- Chinese Journal of Luminescence Vol. 23, Issue 4, Pages: 396-398(2002)
- 作者机构：
  
  1. 中国科学技术大学物理系
  2. 中国科学技术大学国家同步辐射实验室合肥,230029
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Received：20 September 2001，
  
  Revised：20 April 2002，
  
  Published：20 July 2002
- 稿件说明：
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刘波, 施朝淑, 张庆礼, 郭常新. GdVO4：Eu3+的热释光研究[J]. 发光学报, 2002,23(4): 396-398

LIU Bo, SHI Chao-shu, ZHANG Qing-li, GUO Chang-xin. Thermoluminescence of GdVO4：Eu3+[J]. Chinese Journal of Luminescence, 2002,23(4): 396-398
刘波, 施朝淑, 张庆礼, 郭常新. GdVO4：Eu3+的热释光研究[J]. 发光学报, 2002,23(4): 396-398 DOI：

LIU Bo, SHI Chao-shu, ZHANG Qing-li, GUO Chang-xin. Thermoluminescence of GdVO4：Eu3+[J]. Chinese Journal of Luminescence, 2002,23(4): 396-398 DOI：

摘要

GdVO

:Eu

有着十分优良的发光特性

它发光强度高

特别是具有很好的温度特性

在室温以上发光强度随温度的升高而增强

很利于在高温下使用此材料.本文对它的热释光进行了研究

其热释光峰值分别位于193

235和304K

根据计算可知它们的陷阱深度分别为0.39

0.47和0.61eV.陷阱的主要来源可能是F

F和钒空位;Eu

掺入导致的晶格畸变

其中最主要的来源可能是空位导致的.

Abstract

GdVO

:RE

is a significant red-emitting material with a main emission peak at 619nm.The luminescence intensity of GdVO

:Eu

is in the same order as that of YVO

:Eu

. GdVO

:Eu

has good temperature properties and higher quenching temperature than that of YVO

:Eu

so it is very suitable for application in high temperature environment such as high-pressure mercury-vapor lamps. Usually

there are so many defects and traps in solids. Thermoluminescence(TL) is a useful tool to provide us with the information of solid defects and traps. The thermoluminescence of GdVO

:Eu

range from 100K to 500K was detected. The sample was excited by X-ray at the temperature of 90K. The velocity of rising temperature is 0.5K/s. The result shows that there are three main TL bands peaked at 193

253 and 304K. The trap parameters are obtained from the TL curves. The trap depth is 0.39

0.47 and 0.61eV

respectively. The origination of traps has three possibilities. Firstly

the color centers such as F centers and F+ centers as a result of the volatilization of V

during preparation can form trap level in the forbidden band. The second

when Eu

is doped into host and enter into Gd

sublattice

the distortion of the lattice also can form trap level. Finally

because the sample is powder

there is many surface states which can form traps

too. Above all

the most possible reason maybe the color centers.

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