Photoluminescence ofHg1-xCdxTe/Cd1-yZnyTe Epitaxial Films Grown by MOCVD

HUANG Hui; XU Jing-jun; WANG Ji-you; ZHANG Cun-zhou; JI Rong-Bin; PAN Shun-chen; ZHANG Gua

doi:null

您当前的位置：

首页 >

文章列表页 >

Photoluminescence ofHg_1-xCd_xTe/Cd_1-yZn_yTe Epitaxial Films Grown by MOCVD

更新时间：2020-08-11

- Photoluminescence ofHg_1-xCd_xTe/Cd_1-yZn_yTe Epitaxial Films Grown by MOCVD
- Chinese Journal of Luminescence Vol. 23, Issue 2, Pages: 133-136(2002)
- 作者机构：
  
  1. 昆明物理研究所, 云南昆明650223
  2. 南开大学物理科学学院光子学中心天津,300071
- 作者简介：
- 基金信息：
- DOI：
  CLC： O472.3
- Received：20 September 2001，
  
  Revised：25 October 2001，
  
  Published：20 March 2002
- 稿件说明：
移动端阅览
黄晖, 许京军, 王吉有, 张存洲, 姬荣斌, 潘顺臣, 张光寅. MOCVD外延Hg1-xCdxTe/Cd1-yZnyTe薄膜的光致发光[J]. 发光学报, 2002,23(2): 133-136

HUANG Hui, XU Jing-jun, WANG Ji-you, ZHANG Cun-zhou, JI Rong-Bin, PAN Shun-chen, ZHANG Guang-yin. Photoluminescence ofHg1-xCdxTe/Cd1-yZnyTe Epitaxial Films Grown by MOCVD[J]. Chinese Journal of Luminescence, 2002,23(2): 133-136
黄晖, 许京军, 王吉有, 张存洲, 姬荣斌, 潘顺臣, 张光寅. MOCVD外延Hg1-xCdxTe/Cd1-yZnyTe薄膜的光致发光[J]. 发光学报, 2002,23(2): 133-136 DOI：

HUANG Hui, XU Jing-jun, WANG Ji-you, ZHANG Cun-zhou, JI Rong-Bin, PAN Shun-chen, ZHANG Guang-yin. Photoluminescence ofHg1-xCdxTe/Cd1-yZnyTe Epitaxial Films Grown by MOCVD[J]. Chinese Journal of Luminescence, 2002,23(2): 133-136 DOI：

摘要

利用Raman显微镜系统对两块用MOCVD方法在Cd

0.96

0.04

Te衬底上生长的Hg

0.8

0.2

Te外延薄膜样品在光谱范围50～5000cm

-1

进行了测量

在其中的一块样品上首次发现了143eV至193eV范围内出现的具有周期结构的光致发光峰

该发光峰对应的能带中心位于Hg

0.8

0.2

Te外延层导带底上方173eV

在另外一块外延薄膜样品中仅观察到四个Raman散射峰

没有周期结构的发光峰。为了分析上述光致发光的起因

对两块样品进行了X射线的双晶回摆曲线样品结构分析

得出样品在143eV至193eV范围的光致发光峰是由于改进MOCVD生长工艺提高了样品的结构质量所致

通过分析指出该光致发光峰是来源于Hg

0.8

0.2

Te外延层中的阴性离子空位的共振能级。

Abstract

The fundamental physical properties of Hg

1-x

Te make it an excellent candidate material for infrared photoelectric detectors. Recently

much attention has been paid to Hg

1-x

films grown by different epitaxial techniques on the substrate Cd

1-y

Te due to the possibility of fabricating large area detectors as well as high precision focal plane array detectors. Investigations of the phonon vibration spectra for Hg

1-x

are necessary to understand the lattice dynamics and to obtain structure information about the material. In this paper

the micro-Raman spectra of two MOCVD Hg

1-x

/Cd

1-y

Te epitaxial film samples were measured at room temperature within the spectral range of 50cm

-1

to 5000cm

-1

. The quasi-periodically micro-photoluminescent structure in the range from 50cm

-1

to 5000cm

-1

was observed for the first time in one sample. The micro-photoluminescence results show that there is an anion vacancy resonance level far up in the conduction band

about 1.73eV above the conduction band edge in Hg

1-x

/Cd

1-y

Te epitaxial film. In the micro-Raman spectrum of another sample four main Raman peaks at 125.3cm

-1

140.8cm

-1

164.8cm

-1

and 265.2cm

-1

were observed. The Raman peak of 125.3cm

-1

belongs to HgTe-like TO

phonon vibrational mode

140.8cm

-1

belongs to HgTe-like LO

phonon vibrational mode

164.8cm

-1

occurs due to CdTe-like LO

phonon vibration

and 265.2cm

-1

come from the two-phonon mode TO

(HgTe-like)+LO

(HgTe-like). At the same time

X-ray double-crystal rocking curves were also obtained in order to check the structure quality of two samples. Our results definitely show that the quasi-periodically micro-photoluminescent structure is mainly due to the improvement in quality of the Hg

1-x

Te epilayer. The experimental results also demonstrate that micro-photoluminescence technique in micro-Raman system seems to be a good convenient

simple

contactless method to characterize the perfection of Hg

1-x

Te epitaxial films.

关键词

Keywords

references

Views

127

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Cu-doped ZnO Thin Film Prepared by Metallorganic Chemical Vapor Deposition

Influence of Carrier Gas in Metalorganic Precursors on the MOCVD Growth of InGaN Films

GaN：Si Single Crystal Films Grown on Sapphire Substrates by MOCVD

Blue Luminescence in Unintentionally Doped GaN Grown by MOCVD

PHOTOLUMINESCENCE OF GaInSb/GaSb QUANTUM WELL STRUCTURES

Related Author

XU Lu

LIANG Hong-wei

LIU Yuan-da

LI Chun-ye

LIU Yang

BIAN Ji-ming

LI Guo-xing

LI Wan-cheng

Related Institution

School of Physics and Optoelectronic Technology, Dalian University of Technology

College of Electronic Science and Engineering, State Key Laboratory on Integrated Optoelectronics, Jilin University

Institute of Materials Science, Nanchang University

Changchun Institute of Physics, Chinese Academy of Sciences

Changchun Institute of Physits, Chinese Academy Sciences

AI问答

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰