Investigation of Decay Process of Photo-generated Carrier in the Luminescent Material (ZnCd)S:Cu by Microwave Absorption Method

LI Zhi-qiang; WU Feng; DONG Guo-yi; WEI Zhi-ren; YANG Shao-peng; Li Xiao-wei

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Investigation of Decay Process of Photo-generated Carrier in the Luminescent Material (ZnCd)S:Cu by Microwave Absorption Method

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- Investigation of Decay Process of Photo-generated Carrier in the Luminescent Material (ZnCd)S:Cu by Microwave Absorption Method
- Chinese Journal of Luminescence Vol. 23, Issue 6, Pages: 570-574(2002)
- 作者机构：
  
  河北大学物理科学与技术学院, 河北, 保定, 071002
- 作者简介：
- 基金信息：
- DOI：
  CLC： O482.31
- Received：22 July 2002，
  
  Revised：23 September 2002，
  
  Published：20 November 2002
- 稿件说明：
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李志强, 吴峰, 董国义, 韦志仁, 杨少鹏, 李晓苇. 微波吸收法研究(ZnCd)S:Cu发光材料光生载流子的衰减过程[J]. 发光学报, 2002,23(6): 570-574

LI Zhi-qiang, WU Feng, DONG Guo-yi, WEI Zhi-ren, YANG Shao-peng, Li Xiao-wei. Investigation of Decay Process of Photo-generated Carrier in the Luminescent Material (ZnCd)S:Cu by Microwave Absorption Method[J]. Chinese Journal of Luminescence, 2002,23(6): 570-574
李志强, 吴峰, 董国义, 韦志仁, 杨少鹏, 李晓苇. 微波吸收法研究(ZnCd)S:Cu发光材料光生载流子的衰减过程[J]. 发光学报, 2002,23(6): 570-574 DOI：

LI Zhi-qiang, WU Feng, DONG Guo-yi, WEI Zhi-ren, YANG Shao-peng, Li Xiao-wei. Investigation of Decay Process of Photo-generated Carrier in the Luminescent Material (ZnCd)S:Cu by Microwave Absorption Method[J]. Chinese Journal of Luminescence, 2002,23(6): 570-574 DOI：

摘要

采用微波吸收法

测量了(ZnCd)S:Cu及ZnS:Mn

Cu粉末材料受到超短脉冲激光激发后

其自由电子和浅束缚电子的衰减过程。发现Cd

的浓度对导带电子和浅束缚电子的寿命影响较小

而Cu

的浓度对导带电子和浅束缚电子的寿命有明显的影响

提高激活剂掺杂浓度会使自由电子的寿命大大缩短。

Abstract

The decay process of photo-generated electrons and shallow-trapped electrons was measured by microwave absorption method while a series of powder material (ZnCd)S:Cu and ZnS:Mn

Cu were excited by ultra-short pulse laser. It is measured that the lifetime of photoelectrons is 1 864ns and that of shallow-trapped electrons is 2 144ns in the material (Zn

0.97

0.03

)S:Cu. The lifetime of photoelectrons is 1 376ns and that of shallow-trapped electrons is 1 888ns in the material (Zn

0.83

0.17

)S:Cu respectively after increasing the concentration of Cd

ion. The lifetime of photoelectrons in conduction band only have a decrease of 488ns

thereby it is believed that the concentration of Cd

ion has less influence on the lifetime of electron in conduction band. At the same time

it is measured that the peak position of luminescent spectrum shifts toward long-wave band along with Cd

concentration enhancing. The material ZnS:Cu undoped with Cd

ion shows a luminescent spectrum peaked at 505nm and the luminescent spectrum peaked at 565nm for (Zn

0.83

0.17

)S:Cu doped with Cd

concentration at 17%. The shifting range toward long-wave band is 60nm. These said the phenomena are likely resulted from the change of bandgap width of luminescent material due to the present of CdS in the host. The decline of luminance output to some extent is simultaneously noticed with the increase of Cd

concentration.For the material ZnS:Mn

it is discovered that the lifetime of photoelectrons decreased to a large extent from 1 720ns to 432ns accompanied with an increase of brightness during the course of enhancing the content of Cu from 0.02 to 0.5%.The maximum luminance was obtained at Cu content of 0.1% and subsequently the brightness declined with the enhancing content of Cu. Therefore

it is considered that a mass of non-radiative transition which can not make for the luminescence is likely to occur so that it can result in diminished brightness at excessively higher content of Cu. Accordingly

there exists a optimal value of the content of Cu for the luminescent material ZnS:Mn

Cu.

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